CIL187

更新时间： 2024-01-27 05:09:50

品牌	Logo	应用领域
CDIL		晶体小信号双极晶体管
页数	文件大小	规格书
3页	154K
描述
Intended For Low Voltage, High Current Output Pair Application

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中文翻译

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技术参数
数据手册

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CIL187 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	风险等级：	5.77
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

CIL187 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

CIL 187

TO-92

Plastic Package

Intended For Low Voltage , High Current Output Pair Application

Complementary CIL 188

ABSOLUTE MAXIMUM RATINGS ( Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector Emitter Voltage (V_BE=0)

V_CES

V_CEO

V_EBO

I_C

I_CM

I_B

I_BM

P_TA

T_j, T_stg

Collector Emitter Voltage ( Open Base)

Emitter Base Voltage ( Open Collector)

Collector Current

CollectorCurent ( Peak Value )

Base Current

Base Current (Peak Value)

Total Power Dissipation @ Ta=25ºC

Operating And Storage Junction

Temperature Range

700

100

ºC

200

625

-55 to +150

ELECTRICAL CHARACTERISTICS ( Ta=25ºC unless specified otherwise)

VALUE

TYP

DESCRIPTION

SYMBOL TEST CONDITION

UNIT

MAX

MIN

I_CBO

V_CB=25V, I_E= 0

µA

Collector Cut off Current

V_CB=25V, I_E= 0

T_j= 150ºC

I_EBO

V_EB=5V, I_C= 0

µA

Emitter Cut off Current

Base Cut on Voltage

Collector Emitter Saturation

Voltage

0.5

V_{BE (on)}I_C=1A, V_CE=1V

V_CE(sat)I_C=1A,I_B=100mA

h_FE

V_CE=10V,I_C=5mA

V_CE=1V,I_C=300mA

V_CE=1V,I_C=1A

DC Current Gain

100

300

DYNAMIC CHARACTERISTICS

f_T

C_c

I_C=10mA, V_CE=2V

Transition Frequency

Collector Capacitance

270

MHz

I_E=0, V_CB=5V,

f=1MHz

CIL187

CIL188

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

中文翻译

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