5秒后页面跳转
CDL13007CBULK PDF预览

CDL13007CBULK

更新时间: 2024-01-09 12:18:06
品牌 Logo 应用领域
CDIL 晶体晶体管
页数 文件大小 规格书
3页 86K
描述
Power Bipolar Transistor,

CDL13007CBULK 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.63外壳连接:COLLECTOR
最大集电极电流 (IC):8 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):32
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN参考标准:TS 16949
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

CDL13007CBULK 数据手册

 浏览型号CDL13007CBULK的Datasheet PDF文件第2页浏览型号CDL13007CBULK的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
NPN PLASTIC POWER TRANSISTOR  
CDL13007  
TO-220  
Plastic Package  
Used in Energy Saving Lights and Power Switch Circuits  
ABSOLUTE MAXIMUM RATINGS  
VALUE  
DESCRIPTION  
SYMBOL  
UNIT  
VCBO  
700  
400  
9
8
2
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current Continuous  
Power Dissipation upto Ta=25ºC  
V
V
VCEO  
VEBO  
IC  
V
A
W
PD  
Power Dissipation upto Tc=25ºC  
PD  
80  
W
Operating and Storage Junction  
Temperature Range  
Tj, Tstg  
- 55 to +150  
ºC  
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
ICBO  
TEST CONDITION  
VCB=700V, IE=0  
VEB=9V, IC=0  
IC=2A, VCE=5V (Note1)  
hFE1 IC=5mA, VCE=5V  
hFE2 IC=2A, VCE=5V  
IC=5A, IB=1A  
MIN  
TYP MAX  
UNIT  
mA  
mA  
Collector Cut Off Current  
Emitter Cut Off Current  
DC Current Gain  
Ratio Between hFE1 of Low Current and  
hFE2 of High Current  
1.0  
1.0  
40  
IEBO  
*hFE  
8
hFE1/hFE2  
0.75  
*VCE (sat)  
*VBE (sat)  
fT  
Collector Emitter Saturation Voltage  
1.5  
1.5  
V
V
IC=5A, IB=1A  
Base Emitter Saturation Voltage  
Transition Frequency  
VCE=10V, IC=500mA, f=1MHz  
4
MHz  
Switching Time  
DESCRIPTION  
Fall Time  
SYMBOL  
TEST CONDITION  
IC=2A, IB1= -1B2=0.4A  
VCC=120V  
MIN  
TYP MAX  
UNIT  
ms  
tf  
0.8  
3.6  
ts  
Storage Time  
ms  
*hFE Classification  
C : 24 - 33  
E : 32 - 40  
A : 08 - 17  
B : 16 - 25  
CDL  
13007C  
XX  
CDL  
13007E  
XX  
Marking  
CDL  
13007A  
XX  
CDL  
13007B  
XX  
Product is pre-selected in DC Current  
Gain (Groups A to E). CDIL reserves the  
right to ship any of the group(s) to  
customers depending on production  
availability.  
XX=date code  
*Pulse test tp <300ms, duty cycle <2%  
CDL13007Rev_2 130106E  
Data Sheet  
Page 1 of 3  
Continental Device India Limited  

与CDL13007CBULK相关器件

型号 品牌 描述 获取价格 数据表
CDL13007D CDIL 暂无描述

获取价格

CDL13007E CDIL NPN PLASTIC POWER TRANSISTOR

获取价格

CDL13007EBULK CDIL 暂无描述

获取价格

CDL13007ETUBE CDIL Power Bipolar Transistor,

获取价格

CDL20140 ETC PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED POSITIVE DOUBLER|100V V(DRM)|MODULE-S

获取价格

CDL20160 ETC PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED POSITIVE DOUBLER|100V V(DRM)|MODULE-S

获取价格