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CAT5111V-50TE13 PDF预览

CAT5111V-50TE13

更新时间: 2024-01-16 16:13:05
品牌 Logo 应用领域
CATALYST 转换器数字电位计电阻器光电二极管
页数 文件大小 规格书
9页 453K
描述
100-Tap Digitally Programmable Potentiometer

CAT5111V-50TE13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.21
Is Samacsys:N其他特性:NONVOLATILE MEMORY
控制接口:INCREMENT/DECREMENT转换器类型:DIGITAL POTENTIOMETER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm功能数量:1
位置数:100端子数量:8
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
电阻定律:LINEAR最大电阻容差:20%
最大电阻器端电压:3 V最小电阻器端电压:
座面最大高度:1.75 mm标称供电电压:3 V
表面贴装:YES技术:CMOS
标称温度系数:300 ppm/ °C温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40标称总电阻:50000 Ω
宽度:3.9 mmBase Number Matches:1

CAT5111V-50TE13 数据手册

 浏览型号CAT5111V-50TE13的Datasheet PDF文件第1页浏览型号CAT5111V-50TE13的Datasheet PDF文件第2页浏览型号CAT5111V-50TE13的Datasheet PDF文件第4页浏览型号CAT5111V-50TE13的Datasheet PDF文件第5页浏览型号CAT5111V-50TE13的Datasheet PDF文件第6页浏览型号CAT5111V-50TE13的Datasheet PDF文件第7页 
CAT5113  
OPERATION MODES  
R
H
INC  
High to Low  
High to Low  
High  
CS  
U/D  
High  
Low  
X
Operation  
Wiper toward H  
C
H
R
wi  
Low  
Low  
R
WB  
Wiper toward L  
C
W
Low to High  
Low to High  
High  
Store Wiper Position  
No Store, Return to Standby  
Standby  
Low  
X
C
Potentiometer  
Equivalent Circuit  
L
X
X
R
L
Operating Ambient Temperature  
ABSOLUTE MAXIMUM RATINGS  
Commercial (Cor Blank suffix) ...... 0°C to +70°C  
Industrial (Isuffix)...................... 40°C to +85°C  
Junction Temperature ..................................... +150°C  
Storage Temperature ....................... 65°C to +150°C  
Lead Soldering (10 sec max) .......................... +300°C  
Supply Voltage  
VCC to GND ...................................... 0.5V to +7V  
Inputs  
CS to GND .............................0.5V to VCC +0.5V  
INC to GND ............................0.5V to VCC +0.5V  
U/D to GND ............................0.5V to VCC +0.5V  
HtoGND ................................0.5V to VCC +0.5V  
L to GND ................................0.5V to VCC +0.5V  
W to GND ...............................0.5V to VCC +0.5V  
* Stresses above those listed under Absolute Maximum Ratings may  
cause permanent damage to the device. Absolute Maximum Ratings  
are limited values applied individually while other parameters are  
within specified operating conditions, and functional operation at any  
of these conditions is NOT implied. Device performance and reliability  
maybeimpairedbyexposuretoabsoluteratingconditionsforextended  
periods of time.  
RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Test Method  
Min  
Typ  
Max  
Units  
(1)  
VZAP  
ESD Susceptibility  
Latch-Up  
MIL-STD-883, Test Method 3015  
JEDEC Standard 17  
2000  
100  
Volts  
mA  
(1)(2)  
ILTH  
TDR  
Data Retention  
Endurance  
MIL-STD-883, Test Method 1008  
MIL-STD-883, Test Method 1003  
100  
Years  
Stores  
NEND  
1,000,000  
DC Electrical Characteristics: VCC = +2.5V to +6.0V unless otherwise specified  
Power Supply  
Symbol Parameter  
Conditions  
Min  
2.5  
Typ  
Max  
6.0  
Units  
V
VCC  
Operating Voltage Range  
ICC1  
Supply Current (Increment)  
VCC = 6V, f = 1MHz, IW=0  
VCC = 6V, f = 250kHz, IW=0  
100  
50  
µA  
ICC2  
Supply Current (Write)  
Programming, VCC = 6V  
VCC = 3V  
1
mA  
500  
µA  
(2)  
ISB1  
Supply Current (Standby)  
CS=VCC-0.3V  
0.01  
1
µA  
U/D, INC=VCC-0.3V or GND  
Logic Inputs  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Units  
IIH  
Input Leakage Current  
VIN = VCC  
10  
10  
µA  
µA  
V
IIL  
Input Leakage Current  
VIN = 0V  
VIH1  
VIL1  
VIH2  
VIL2  
TTL High Level Input Voltage  
TTL Low Level Input Voltage  
CMOS High Level Input Voltage  
CMOS Low Level Input Voltage  
4.5V VCC 5.5V  
2
0
VCC  
0.8  
V
2.5V VCC 6V  
VCC x 0.7  
-0.3  
VCC + 0.3  
VCC x 0.2  
V
V
NOTES: (1) This parameter is tested initially and after a design or process change that affects the parameter.  
(2) Latch-up protection is provided for stresses up to 100mA on address and data pins from 1V to VCC + 1V  
(3) IW=source or sink  
(4) These parameters are periodically sampled and are not 100% tested.  
Doc. No. 2009, Rev. R  
3

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