Datasheet > C3014

C3014

更新时间： 2024-01-07 21:45:57

品牌	Logo	应用领域
IMP		/
页数	文件大小	规格书
2页	29K
描述
CMOS 3mm 5 Volt Single Metal Analog

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C3014 数据手册

Process C3014

Physical Characteristics

Starting Material

Starting Mat. Resistivity 15 - 25 Ω-cm

N <100>

N+/P+ Width/Space

N+ To P+ Space

3.0 / 3.0µm

12µm

Typ. Operating Voltage

Well Type

Metal Layers

Poly Layers

Contact Size

P-well

Contact To Poly Space

2.5µm

1.5µm

1.0µm

Contact Overlap Of Diffusion

Contact Overlap Of Poly

Metal-1 Overlap Of Contact

Minimum Pad Opening

Minimum Pad-to-Pad Spacing

Minimum Pad Pitch

1.0µm

2.0x2.0µm

3.5 / 2.5µm

4.0 / 2.5µm

100x100µm

55µm

80.0µm

Metal-1 Width/Space

Gate Poly Width/Space

Special Feature of C3014 Process: P-well analog low threshold process with single metal

CMOS 3.0µm technology for 5 Volt applications.

C3014-4-98

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与C3014相关器件

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C-301SR-11	ETC	获取价格	SINGLE DIGIT DISPLAY
C-301Y-11	ETC	获取价格	SINGLE DIGIT DISPLAY