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BZX85C200-TAP PDF预览

BZX85C200-TAP

更新时间: 2024-01-23 14:47:42
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
9页 219K
描述
Zener Diode, 200V V(Z), 5%, 1.3W,

BZX85C200-TAP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.82
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:1500 ΩJESD-609代码:e3
元件数量:1最高工作温度:175 °C
最大功率耗散:1.3 W标称参考电压:200 V
子类别:Voltage Reference Diodes表面贴装:NO
端子面层:Matte Tin (Sn)最大电压容差:5%
工作测试电流:1.5 mABase Number Matches:1

BZX85C200-TAP 数据手册

 浏览型号BZX85C200-TAP的Datasheet PDF文件第2页浏览型号BZX85C200-TAP的Datasheet PDF文件第3页浏览型号BZX85C200-TAP的Datasheet PDF文件第4页浏览型号BZX85C200-TAP的Datasheet PDF文件第5页浏览型号BZX85C200-TAP的Datasheet PDF文件第6页浏览型号BZX85C200-TAP的Datasheet PDF文件第7页 
BZX85-Series  
Vishay Semiconductors  
VISHAY  
Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes.  
• For use in stabilizing and clipping circuits with high  
power rating.  
• The Zener voltages are graded according to the  
international E 24 standard. Replace suffix "C"  
with "B" for 2 % tolerance.  
17173  
Applications  
Voltage stabilization  
Mechanical Data  
Case: DO-41 Glass case  
Weight: approx. 310 mg  
Packaging Codes/Options:  
TR / 5 k per 13" reel (52 mm tape), 25 k/box  
TAP / 5 k per ammo pack (52 mm tape), 25 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Symbol  
Value  
Unit  
W
Zener current (see Table "Electrical  
Characteristics")  
1)  
Power dissipation  
P
tot  
1.3  
1)  
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
thJA  
130  
Junction temperature  
Storage temperature  
T
175  
°C  
°C  
j
T
- 55 to + 175  
S
1)  
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature  
Document Number 85607  
Rev. 1.7, 14-Jun-04  
www.vishay.com  
1

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