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BZT52B11-GS08 PDF预览

BZT52B11-GS08

更新时间: 2024-01-13 18:40:05
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
9页 232K
描述
Zener Diode, 11V V(Z), 5.4%, 0.5W,

BZT52B11-GS08 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.83
Is Samacsys:N配置:SINGLE
二极管类型:ZENER DIODE最大动态阻抗:20 Ω
JESD-609代码:e3元件数量:1
最高工作温度:150 °C最大功率耗散:0.5 W
标称参考电压:11 V子类别:Voltage Reference Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
最大电压容差:5.4%工作测试电流:5 mA
Base Number Matches:1

BZT52B11-GS08 数据手册

 浏览型号BZT52B11-GS08的Datasheet PDF文件第2页浏览型号BZT52B11-GS08的Datasheet PDF文件第3页浏览型号BZT52B11-GS08的Datasheet PDF文件第4页浏览型号BZT52B11-GS08的Datasheet PDF文件第5页浏览型号BZT52B11-GS08的Datasheet PDF文件第6页浏览型号BZT52B11-GS08的Datasheet PDF文件第7页 
BZT52-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes  
• These diodes are also available in other case  
styles and other configurations including: the  
SOT-23 case with type designation BZX84 series,  
the dual zener diode common anode configuration  
in the SOT-23 case with type designation AZ23  
series and the dual zener diode common cathode  
configuration in the SOT-23 case with type desig-  
nation DZ23 series.  
17431  
• The Zener voltages are graded according to the  
international E 24 standard.  
Mechanical Data  
Case: SOD-123 Plastic case  
Weight: approx. 9.3 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Symbol  
Value  
Unit  
Zener current see table "  
Characteristics "  
2)  
Power dissipation  
Power dissipation  
P
P
mW  
mW  
tot  
tot  
500  
1)  
410  
1)  
2)  
2
Diode on ceramic substrate 0.7 mm; 2.5 mm pad areas  
2
Diode on ceramic substrate 0.7 mm; 5 mm pad areas  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
thJA  
300  
Junction temperature  
T
150  
°C  
°C  
J
Storage temperature range  
T
- 65 to + 150  
S
1)  
Valid provided that electrodes are kept at ambient temperature  
Document Number 85760  
Rev. 1.5, 13-Sep-04  
www.vishay.com  
1

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