Nexperia
BZT52-B series
Single Zener diodes in a SOD123 package
mbg801
mbg781
3
10
300
P
I
F
ZSM
(W)
(mA)
2
200
10
(1)
(2)
10
100
1
10
0
0.6
- 1
0.8
1
1
10
t
(ms)
V
(V)
p
F
(1) Tj = 25 °C (prior to surge)
(2) Tj = 150 °C (prior to surge)
Tj = 25 °C
Figure 2.ꢀForward current as a function of forward
voltage; typical values
Figure 1.ꢀNon-repetitive peak reverse power dissipation
as a function of pulse duration; maximum values
mbg782
mbg783
0
10
12
S
S
Z
(mV/K)
Z
11
4V3
(mV/K)
10
9V1
- 1
5
3V9
3V6
8V2
7V5
6V8
6V2
5V6
5V1
- 2
- 3
0
3V3
4V7
3V0
2V4
2V7
- 5
0
20
40
60
0
4
8
12
16
20
I
(mA)
Z
I
(mA)
Z
BZT52-B2V4 to BZT52-B4V3
Tj = 25 °C to 150 °C
BZT52-B4V7 to BZT52-B12
Tj = 25 °C to 150 °C
Figure 3.ꢀTemperature coefficient as a function of
working current; typical values
Figure 4.ꢀTemperature coefficient as a function of
working current; typical values
8 Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BZT52-B_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2017
6 / 11