Datasheet > BZD27C510

BZD27C510

更新时间： 2024-02-11 09:42:53

品牌	Logo	应用领域
恩智浦 - NXP		电视
页数	文件大小	规格书
14页	90K
描述
DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

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BZD27C510 数据手册

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZD27 series

hermetically sealed and fatigue free

as coefficients of expansion of all

used parts are matched.

FEATURES

DESCRIPTION

• Glass passivated

Cavity free cylindrical glass SOD87

package through Implotec

technology. This package is

(1)

• High maximum operating

temperature

(1) Implotec is a trademark of Philips.

• Low leakage current

• Excellent stability

handbook, 4 columns

• Zener working voltage range:

3.6 to 270 V for 46 types

MAM249

• Transient suppressor stand-off

voltage range: 6.2 to 430 V

for 45 types

Fig.1 Simplified outline (SOD87) and symbol.

• Supplied in 8 mm embossed tape.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

P_tot

total power dissipation

BZD27-C3V6 to -C6V8

BZD27-C7V5 to -C510

total power dissipation

BZD27-C3V6 to -C6V8

BZD27-C7V5 to -C510

T_tp= 105 °C; see Figs 2 and 3

−

1.7

2.3

P_tot

PCB mounted (see Fig.7)

_amb= 60 °C; see Fig.2

_amb= 55 °C; see Fig.3

−

0.8

P_ZSM

non-repetitive peak reverse t_p= 100 µs; square pulse;

power dissipation

T_j= 25 °C prior to surge; see Figs.4 and 5

BZD27-C3V6 to -C6V8

−

300

BZD27-C7V5 to -C510

P_RSM

non-repetitive peak reverse 10/1000 µs exponential pulse (see Fig.8);

power dissipation

T_j= 25 °C prior to surge

BZD27-C7V5 to -C510

storage temperature

BZD27-C3V6 to -C6V8

BZD27-C7V5 to -C510

junction temperature

BZD27-C3V6 to -C6V8

BZD27-C7V5 to -C510

−

150

T_stg

−65

+200

+175

°C

T_j

−65

+200

+175

°C

1996 Jun 10

123 4 5 6 7...14

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