Datasheet > BZD27-C47T/R

BZD27-C47T/R

更新时间： 2022-12-01 21:19:57

品牌	Logo	应用领域
恩智浦 - NXP		电视
页数	文件大小	规格书
14页	90K
描述
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

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BZD27-C47T/R 数据手册

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZD27 series

ELECTRICAL CHARACTERISTICS

Total series

T_j= 25 °C unless otherwise specified.

SYMBOL

PARAMETER

forward voltage

CONDITIONS

I_F= 0.2 A; see Fig.6

MIN.

MAX.

UNIT

V_F

−

1.2

Per type when used as voltage regulator diodes

T_j= 25 °C unless otherwise specified.

DIFFERENTIAL TEMPERATURE

TEST

REVERSE CURRENT

WORKING VOLTAGE

V_Z(V) at I_Z

TYPE

No.

RESISTANCE

COEFFICIENT CURRENT at REVERSE VOLTAGE

SUFFIX

r_dif(Ω) at I_Z

S_Z(%/K) at I_Z

I_R(µA)

(1)

I_Z(mA)

V_R(V)

MIN.

NOM.

MAX.

TYP.

MAX.

MIN.

MAX.

C3V6

C3V9

C4V3

C4V7

C5V1

C5V6

C6V2

C6V8

C7V5

C8V2

C9V1

C10

3.4

3.7

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

3.8

4.1

−0.14

−0.12

−0.10

−0.08

−0.04

−0.01

0.00

0.03

0.05

0.06

0.07

−0.04

−0.02

0.00

−0.02

0.04

0.06

0.07

0.08

0.09

0.10

0.11

0.12

100

4.0

4.6

4.4

5.0

4.8

5.4

5.2

6.0

5.8

6.6

6.4

7.2

7.0

7.9

7.7

8.7

8.5

9.6

9.4

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

28.9

7.5

8.2

9.1

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

C11

C12

C13

C15

C16

C18

C20

C22

C24

C27

C30

C33

C36

C39

C43

C47

1996 Jun 10

1 234 5 6 7...14

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