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BZD27-C240 PDF预览

BZD27-C240

更新时间: 2024-02-08 14:34:23
品牌 Logo 应用领域
恩智浦 - NXP 稳压二极管
页数 文件大小 规格书
9页 42K
描述
Voltage regulator diodes

BZD27-C240 数据手册

 浏览型号BZD27-C240的Datasheet PDF文件第1页浏览型号BZD27-C240的Datasheet PDF文件第3页浏览型号BZD27-C240的Datasheet PDF文件第4页浏览型号BZD27-C240的Datasheet PDF文件第5页浏览型号BZD27-C240的Datasheet PDF文件第6页浏览型号BZD27-C240的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZD27 series  
hermetically sealed and fatigue free  
as coefficients of expansion of all  
used parts are matched.  
FEATURES  
DESCRIPTION  
Glass passivated  
Cavity free cylindrical glass SOD87  
package through Implotec  
technology. This package is  
(1)  
High maximum operating  
temperature  
(1) Implotec is a trademark of Philips.  
Low leakage current  
Excellent stability  
k
a
handbook, 4 columns  
Zener working voltage range:  
3.6 to 270 V for 46 types  
MAM249  
Transient suppressor stand-off  
voltage range: 6.2 to 430 V  
for 45 types  
Fig.1 Simplified outline (SOD87) and symbol.  
Supplied in 8 mm embossed tape.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
Ptot  
total power dissipation  
BZD27-C3V6 to -C6V8  
BZD27-C7V5 to -C510  
total power dissipation  
BZD27-C3V6 to -C6V8  
BZD27-C7V5 to -C510  
Ttp = 105 °C; see Figs 2 and 3  
1.7  
2.3  
W
W
Ptot  
PCB mounted (see Fig.7)  
T
amb = 60 °C; see Fig.2  
amb = 55 °C; see Fig.3  
0.8  
0.8  
W
W
T
PZSM  
non-repetitive peak reverse tp = 100 µs; square pulse;  
power dissipation  
Tj = 25 °C prior to surge; see Figs.4 and 5  
BZD27-C3V6 to -C6V8  
300  
300  
W
W
BZD27-C7V5 to -C510  
PRSM  
non-repetitive peak reverse 10/1000 µs exponential pulse (see Fig.8);  
power dissipation  
Tj = 25 °C prior to surge  
BZD27-C7V5 to -C510  
storage temperature  
BZD27-C3V6 to -C6V8  
BZD27-C7V5 to -C510  
junction temperature  
BZD27-C3V6 to -C6V8  
BZD27-C7V5 to -C510  
150  
W
Tstg  
65  
65  
+200  
+175  
°C  
°C  
Tj  
65  
65  
+200  
+175  
°C  
°C  
1996 Jun 10  
2

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