Datasheet > BTN9970LV

BTN9970LV

更新时间： 2023-09-03 20:37:20

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
33页	654K
描述
The MOTIX™ BTN9970LV is part of the MOTIX™ (NovalithIC™) family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, undervoltage, overcurrent and short circuit. The MOTIX™ BTN9970LV provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption. This device comes in a small HSOF-7-1 package.

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BTN9970LV 数据手册

BTN9970LV NovalithIC^™+

High current PN half-bridge with integrated driver

Features

•

AEC-Q100/Q006 qualified (Grade 1)

Supply voltage range 8 V - 18 V (max up to 40 V)

Path resistance of typ. 9.7 mΩ @ 25°C (max. 18.1 mΩ @ 150°C)

Low quiescent current of max. 3.3 µA @ 85°C

Protection features: overcurrent, undervoltage, overtemperature

Overcurrent detection level of 60 A min

Eight selectable switching slew rates for optimized EME

Status flag diagnosis with feedback of current sense, temperature

and slew rate

Package

Marking

PG-HSOF-7-1

(sTOLL)

BTN9970

Potential applications

•

Automotive 12 V brushed DC Motor

Fuel pump

Power liꢀgate

HVAC blower

Reverse polarity

protection

V_BAT

D_Z1

10 V

R₃

10 kΩ

R₁

1 kΩ

V_S

BTN9970LV

INH

C₁

100 nF

OUT

R₂

1 kΩ

C_O2V

C₁₀

100 nF

C_DC-Link

~1000 µF

Micro-

OUT

controller^OUT

C₁₁

10 mF

C_OUT

ADC

C_IS

1 nF

R_IS

2 kΩ

GND

*) C_O2V, C_OUT(~10 nF) optional to otpimize EMC

Figure 1

Typical application

Product validation

Qualified for automotive applications.

Product validation according to AEC-Q100.

Description

The BTN9970LV is an integrated high current half-bridge for motor drive applications. It is part of the integrated

™

half-bridge NovalithIC + family containing one p-channel high-side MOSFET and one n-channel low-side

MOSFET with an integrated driver IC in one package. Due to the p-channel high-side switch the need for a

charge pump is eliminated thus minimizing EME. Interfacing to a microcontroller is made easy by the integrated

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

Rev. 1.0

2021-10-12

12 3 4 5 6 7...33

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