Datasheet > BT137SERIES

BT137SERIES

更新时间： 2024-02-14 15:54:46

品牌	Logo	应用领域
其他 - ETC		可控硅
页数	文件大小	规格书
6页	51K
描述
Triacs

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数据手册

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BT137SERIES 数据手册

Philips Semiconductors

Product specification

Triacs

BT137 series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

Thermal resistance

full cycle

2.0

2.4

K/W

junction to mounting base half cycle

R_{th j-a}

Thermal resistance

junction to ambient

in free air

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP.

MAX.

...F

UNIT

BT137-

V_D= 12 V; I_T= 0.1 A

...

...G

I_GT

Gate trigger current

Latching current

Holding current

T2+ G+

T2+ G-

T2- G-

T2- G+

100

I_L

V_D= 12 V; I_GT= 0.1 A

T2+ G+

T2+ G-

T2- G-

T2- G+

I_H

V_D= 12 V; I_GT= 0.1 A

V_T

On-state voltage

I_T= 10 A

1.3

0.7

0.4

1.65

1.5

V_GT

Gate trigger voltage

V_D= 12 V; I_T= 0.1 A

V_D= 400 V; I_T= 0.1 A;

T_j= 125 ˚C

0.25

I_D

Off-state leakage current V_D= V_DRM(max)

;

0.1

0.5

T_j= 125 ˚C

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

BT137-

V_DM= 67% V_DRM(max)

...

...F

...G

dV_D/dt

dV_com/dt

t_gt

Critical rate of rise of

off-state voltage

;

100

200

250

V/µs

µs

T_j= 125 ˚C; exponential

waveform; gate open

circuit

Critical rate of change of

commutating voltage

V_DM= 400 V; T_j= 95 ˚C;

I_T(RMS)= 8 A;

dI_com/dt = 3.6 A/ms; gate

open circuit

Gate controlled turn-on

time

I_TM= 12 A; V_D= V_DRM(max);

I_G= 0.1 A; dI_G/dt = 5 A/µs

October 1997

Rev 1.200

123 4 5 6

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与BT137SERIES相关器件

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