生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.14 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 240 V | 最大漏极电流 (ID): | 0.35 A |
最大漏源导通电阻: | 10 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 9 pF | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 1.4 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 30 ns |
最大开启时间(吨): | 10 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP89-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 0.35 A, 240 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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BSP89TRL | NXP |
获取价格 |
TRANSISTOR 350 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S |
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BSP89TRL13 | NXP |
获取价格 |
TRANSISTOR 350 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S |
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BSP92 | NXP |
获取价格 |
P-channel enhancement mode vertical D-MOS transistor |
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BSP92 | INFINEON |
获取价格 |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) |
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BSP92P | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor |
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BSP92P_07 | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor |
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BSP92P-E6327 | INFINEON |
获取价格 |
Transistor |
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BSP92PH6327XTSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.26A I(D), 250V, 12ohm, 1-Element, P-Channel, Silicon, Met |
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BSP92-T | NXP |
获取价格 |
TRANSISTOR 0.18 A, 200 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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