Datasheet > BS62LV1600EI70

BS62LV1600EI70

更新时间： 2024-01-30 17:37:54

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
10页	207K
描述
Very Low Power CMOS SRAM 2M X 8 bit

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数据手册

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BS62LV1600EI70 数据手册

Very Low Power CMOS SRAM

2M X 8 bit

BS62LV1600

Pb-Free and Green package materials are compliant to RoHS

n FEATURES

ŸWide V_CCoperation voltage : 2.4V ~ 5.5V

n DESCRIPTION

The BS62LV1600 is a high performance, very low power CMOS

Static Random Access Memory organized as 2048K by 8 bits and

operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with typical CMOS standby

current of 1.5uA at 3.0V/25^OC and maximum access time of 55ns at

3.0V/85^OC.

ŸVery low power consumption :

V_CC= 3.0V

V_CC= 5.0V

Operation current : 46mA (Max.)at 55ns

2mA (Max.)at 1MHz

1.5uA (Typ.) at 25^OC

Standby current :

Operation current : 115mA (Max.)at 55ns

10mA (Max.)at 1MHz

Standby current :

ŸHigh speed access time :

6.0uA (Typ.) at 25^OC

Easy memory expansion is provided by an active LOW chip enable

(CE1), an active HIGH chip enable (CE2), and active LOW output

enable (OE) and three-state output drivers.

-55

-70

55ns (Max.) at V_CC: 3.0~5.5V

70ns (Max.) at V_CC: 2.7~5.5V

ŸAutomatic power down when chip is deselected

ŸEasy expansion with CE1, CE2 and OE options

ŸThree state outputs and TTL compatible

ŸFully static operation

The BS62LV1600 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BS62LV1600 is available in JEDEC standard 44-pin TSOP II

and 48-ball BGA package.

ŸData retention supply voltage as low as 1.5V

n POWER CONSUMPTION

POWER DISSIPATION

Operating

STANDBY

PRODUCT

FAMILY

OPERATING

TEMPERATURE

PKG TYPE

(I_CCSB1, Max)

(I_CC, Max)

V_CC=5.0V

10MHz

V_CC=3.0V

10MHz

V_CC=5.0V V_CC=3.0V

1MHz

9mA

f_Max.

1MHz

f_Max.

BS62LV1600EC

BS62LV1600FC

BS62LV1600EI

BS62LV1600FI

TSOP II-44

Commercial

50uA

8.0uA

16uA

48mA

50mA

113mA

1.5mA

19mA

20mA

45mA

+0^OC to +70^OC

BGA-48-0912

TSOP II-44

Industrial

100uA

10mA

115mA

2mA

46mA

-40^OC to +85^OC

BGA-48-0912

n PIN CONFIGURATIONS

n BLOCK DIAGRAM

CE1

DQ0

DQ1

VCC

VSS

DQ2

DQ3

A20

A19

A18

A17

A16

A15

CE2

A20

A13

A17

A15

A18

A16

A14

A12

Address

Input

Memory Array

4096

Row

Decoder

DQ7

DQ6

VSS

VCC

DQ5

DQ4

Buffer

4096 x 4096

BS62LV1600EC

BS62LV1600EI

4096

A10

A11

A12

A13

A14

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Data

Input

Column I/O

Buffer

Write Driver

Sense Amp

Data

Output

Buffer

512

Column Decoder

CE2

CE1

CE2

CE1

Control

Address Input Buffer

DQ0

VSS

VCC

DQ3

DQ4

VCC

VSS

DQ7

V_CC

V_SS

A11 A9 A8 A3 A2 A1 A0 A10A19

DQ1

DQ2

A17

A14

A12

DQ5

DQ6

A16

A15

A13

A10

A20

A11

A18

A19

48-ball BGA top view

Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.

R0201-BS62LV1600

Revision 2.2

Jan. 2006

12 3 4 5 6 7...10

中文翻译

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与BS62LV1600EI70相关器件

型号	品牌	获取价格	描述	数据表
BS62LV1600EI-70	BSI	获取价格	Standard SRAM, 2MX8, 70ns, CMOS, PDSO44
BS62LV1600EIG55	BSI	获取价格	Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600EIG70	BSI	获取价格	Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600EIP55	BSI	获取价格	Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600EIP70	BSI	获取价格	Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600FAG55	BSI	获取价格	SRAM
BS62LV1600FAP55	BSI	获取价格	SRAM
BS62LV1600FAP70	BSI	获取价格	SRAM
BS62LV1600FC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 2M X 8 bit
BS62LV1600FC55	BSI	获取价格	Very Low Power CMOS SRAM 2M X 8 bit

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