Datasheet > BS616LV1015AI

BS616LV1015AI

更新时间： 2022-12-11 23:02:14

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
9页	255K
描述
Very Low Power/Voltage CMOS SRAM 64K X 16 bit

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BS616LV1015AI 数据手册

BSI

BS616LV1015

AC ELECTRICAL CHARACTERISTICS ( TA = 0^oC to + 70^oC, Vcc = 5.0V )

WRITE CYCLE

JEDEC

PARAMETER

NAME

CYCLE TIME : 55ns

MIN. TYP. MAX.

PARAMETER

NAME

DESCRIPTION

Write Cycle Time

UNIT

t_AVAX

t_E1LWH

t_AVWL

t_AVWH

t_WLWH

t_WHAX

t_BW

t_WC

t_CW

t_AS

Chip Select to End of Write

Address Setup Time

Address Valid to End of Write

Write Pulse Width

t_AW

t_WP

t_WR

t_BW

t_WHZ

t_DW

t_DH

Write recovery Time

(CE,WE)

(LB,UB)

Date Byte Control to End of Write

Write to Output in High Z

Data to Write Time Overlap

Data Hold from Write Time

Output Disable to Output in High Z

t_WLQZ

t_DVWH

t_WHDX

t_GHQZ

t_OHZ

t_WHOX

t_OW

End of Write to Output Active

SWITCHING WAVEFORMS (WRITE CYCLE)

WRITE CYCLE1 ⁽¹⁾

ADDRESS

(3)

(10)

(5)

LB,UB

(3)

(2)

(4)

OHZ

D _OUT

D _IN

Revision 1.1

Jan. 2004

R0201-BS616LV1015

1...3 4 567 8 9

下载PDF

与BS616LV1015AI相关器件

型号	品牌	描述	获取价格	数据表
BS616LV1015AI55	BSI	Standard SRAM, 64KX16, 55ns, CMOS, PBGA48	获取价格
BS616LV1015AI-55	BSI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	获取价格
BS616LV1015AIG55	BSI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	获取价格
BS616LV1015AIP55	BSI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	获取价格
BS616LV1015EC	BSI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	获取价格
BS616LV1015EC55	BSI	Standard SRAM, 64KX16, 55ns, CMOS, PDSO44	获取价格