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BR25H010-WC

更新时间: 2024-02-01 15:59:30
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
20页 491K
描述
125C Operating tempter

BR25H010-WC 技术参数

生命周期:Active零件包装代码:SOIC
包装说明:LSOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.44
最大时钟频率 (fCLK):5 MHzJESD-30 代码:R-PDSO-G8
长度:5 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128X8
封装主体材料:PLASTIC/EPOXY封装代码:LSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE
并行/串行:SERIAL认证状态:Not Qualified
座面最大高度:1.6 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:4.4 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

BR25H010-WC 数据手册

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Technical Note  
BR25H□□□-WC series  
Operating timing characteristics  
Sync data input / output timing  
(Ta=-40~+125°C, unless otherwise specified, load capacity CL1=100pF)  
tCSS  
tCS  
CSB  
SCK  
2.5VCC5.5V  
tSCKS  
tRC  
tFC  
tSCKWH  
tSCKWL  
tDIS  
Parameter  
Symbol  
Unit  
Min. Typ. Max.  
tDIH  
SCK frequency  
SCK high time  
SCK low time  
fSCK  
tSCKWH  
tSCKWL  
tCS  
-
-
-
-
-
-
-
-
-
-
-
-
5
-
MHz  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
SI  
85  
85  
85  
90  
85  
90  
90  
20  
30  
-
High-Z  
SO  
-
Fig.3 Input timing  
CSB high time  
CSB setup time  
CSB hold time  
SCK setup time  
SCK hold time  
SI setup time  
-
SI is taken into IC inside in sync with data rise  
edge of SCK. Input address and data from the  
most significant bit MSB.  
tCSS  
-
tCSH  
-
tSCKS  
tSCKH  
tDIS  
-
tCS  
-
tSCKH  
CSB  
tCSH  
-
SCK  
SI  
SI hold time  
tDIH  
-
tPD  
tRO,tFO  
tOZ  
tOH  
High-Z  
Data output delay time1  
tPD1  
70  
SO  
Data output delay time2  
(CL2=30pF)  
tPD2  
-
-
55  
ns  
Fig.4 Input / Output timing  
Output hold time  
tOH  
tOZ  
0
-
-
-
-
ns  
ns  
SO is output in sync with data fall edge of SCK.  
Data is output from the most significant bit MSB.  
Output disable time  
100  
HOLDB setting  
setup time  
HOLDB setting  
hold time  
HOLDB release  
setup time  
HOLDB release  
hold time  
Time from HOLDB  
to output High-Z  
Time from HOLDB  
To output change  
SCK rise time*1  
SCK fall time*1  
tHFS  
tHFH  
tHRS  
tHRH  
tHOZ  
tHPD  
0
40  
0
-
-
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
CSB "H"  
"L"  
-
tHFS tHFH  
tHRS tHRH  
SCK  
SI  
70  
-
-
tDIS  
n
n+1  
n-1  
tHOZ  
Dn  
tHPD  
100  
70  
High-Z  
SO  
Dn+1  
Dn  
Dn-1  
-
HOLDB  
tRC  
tFC  
-
-
-
-
-
-
-
-
-
-
1
1
μs  
μs  
ns  
ns  
ms  
Fig.5 HOLD timing  
OUTPUT rise time*1  
OUTPUT fall time*1  
tRO  
tFO  
tE/W  
50  
50  
5
Write time  
*1 NOT 100% TESTED  
AC measurement conditions  
Limits  
Parameter  
Symbol  
Unit  
Min.  
Typ.  
Max.  
Load capacity 1  
Load capacity 2  
Input rise time  
CL1  
-
-
-
-
-
100  
30  
pF  
pF  
ns  
ns  
V
CL2  
-
-
-
-
-
-
50  
Input fall time  
-
50  
Input voltage  
0.2VCC/0.8VCC  
0.3VCC/0.7VCC  
Input / Output judgment voltage  
V
www.rohm.com  
2009.08 - Rev.C  
4/19  
© 2009 ROHM Co., Ltd. All rights reserved.  

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