Datasheet > BR1100

BR1100

更新时间： 2024-02-02 16:00:46

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	58K
描述
SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS

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BR1100 数据手册

MBR1100

Preferred Device

Axial Lead Rectifier

. . . employing the Schottky Barrier principle in a large area

metal-to-silicon power diode. State-of-the-art geometry features

epitaxial construction with oxide passivation and metal overlap

contact. Ideally suited for use as rectifiers in low- voltage,

high- frequency inverters, free wheeling diodes, and polarity

protection diodes.

http://onsemi.com

• Low Reverse Current

SCHOTTKY BARRIER

RECTIFIER

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

• Guard-Ring for Stress Protection

• Low Forward Voltage

1.0 AMPERE

100 VOLTS

• 150°C Operating Junction Temperature

• High Surge Capacity

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

220°C Max. for 10 Seconds, 1/16″ from case

AXIAL LEAD

CASE 59-10

DO-41

• Shipped in plastic bags, 1000 per bag

• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to

the part number

PLASTIC

• Polarity: Cathode Indicated by Polarity Band

• Marking: B1100

MARKING DIAGRAM

MAXIMUM RATINGS

MBR

1100

Rating

Symbol

Max

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

MBR1100 = Device Code

RRM

RWM

Average Rectified Forward Current

1.0

R(equiv)

≤ 0.2 V (dc), R

ORDERING INFORMATION

50°C/W, P.C. Board Mounting, see

Note 1, T = 120°C)

Device

MBR1100

Package

Axial Lead

Shipping

Non-Repetitive Peak

FSM

1000 Units/Bag

5000/Tape & Reel

Surge Current (Surge Applied at

Rated Load Conditions Halfwave,

Single Phase, 60 Hz)

MBR1100RL

Operating and Storage Junction

Temperature Range

T , T

-65 to +150

°C

stg

Preferred devices are recommended choices for future use

and best overall value.

Voltage Rate of Change (Rated V )

dv/dt

V/ns

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

April, 2003 - Rev. 4

MBR1100/D

12 3 4

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