Datasheet > BL1N60D

BL1N60D

更新时间： 2024-04-09 18:58:33

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	567K
描述
1.2A, 600V, 40W, N Channel, Power MOSFETs

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BL1N60D 数据手册

N-Channel Enhancement MOSFET

BL1N60I BL1N60D

Features



Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

Mechanical Data



Case: TO-251, TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matted-Tin plated; Solderable Per MIL-STD-202,

Method 208

BL1N60I

TO-251

BL1N60D

TO-252

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL1N60I

TO-251

TO-252

80 pcs / Tube

1N60I

BL1N60D

80 pcs / Tube or 2500 pcs / Tape & Reel

1N60D

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

600

±30

1.2

Unit

Gate-to-Source Voltage

V_GSS

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current

I_D

0.66

I_DM

Single Pulse Avalanche Energy ^*1

E_AS

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

Unit

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

°C

4.17

-55 ~ +150

T_STG

°C

MTM0131A: July 2022

www.gmesemi.com

12 3 4 5 6

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