Datasheet > BL-LS2012A0E1PT

BL-LS2012A0E1PT

更新时间： 2024-05-23 22:22:43

品牌	Logo	应用领域
BETLUX		/
页数	文件大小	规格书
5页	305K
描述
0805 SMD LED, Phototransistors LED

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中文翻译

获取价格

数据手册

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BL-LS2012A0E1PT 数据手册

SMD Photo Transistor

BL-LS2012A0E1PT

Features:



2.0mmx1.2mm SMD Type photo-transistor

High Reliability

High photo sensitivity

Water Clear, black available

Fast response time

 Application



Infrared applied system

Smoke detector

Infrared Camera

Printer

Optoelectronic switch

Infrared applied system

 Electrical-optical characteristics: (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test

Condition

---

Rang Of wavelength

Peak Wavelength

λ^0..5

λ^P

760

---

1100

---

940

---

Collector – Emitter

Breakdown Voltage

BV^CEO

---

I^C=100μA

E^e=0mW/cm²

I^E=100μA

Emitter-Collector

Breakdown Voltage

Collector-Emitter

Saturation Voltage

BV^ECO

V^CE(sat)

---

E^e=0mW/cm²

I^C=2mA

---

0.8

E^e=1mW/cm²

Rise Time

t^r

---

μS

V^CE=5V

I^C=1mA

Fall Time

t^f

I^CEO

---

R^L=1000Ω

Collector Dark Current

100

Ee=0mW/cm²

V^CE=20V

On State Collector Current

I^C(on)

0.2

0.4

---

E^e=1mW/cm²

V^CE=5V

 Absolute maximum ratings (Ta=25°C)

Parameter

Rating

Unit

Collector-Emitter Voltage Vceo

Emitter-Collector Voltage Veco

Power Dissipation P_d

100

Reverse Voltage V_R

Operation Temperature T_OPR

-40 to +80

°C

Storage Temperature T_STG

-40 to +85

Lead Soldering Temperature

TSOL

Max.260±5°C for 3 sec Max.

(1.6mm from the base of the epoxy bulb)

°C

APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS

REV NO: V.4

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