Philips Semiconductors
Product specification
860 MHz, 21.5 dB gain push-pull amplifier
BGY887
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
power gain
CONDITIONS
f = 50 MHz
MIN.
21
TYP.
21.5
MAX.
22
UNIT
dB
Gp
f = 860 MHz
21.5
0.2
−
22.5
1
−
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
slope cable equivalent
flatness of frequency response
input return losses
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
f = 50 MHz
2
±0.2
29.5
27.5
23
±0.3
−
S11
20
18.5
17
−
−
15.5
14
22
−
20
−
S22
output return losses
20
27
−
18.5
17
25
−
20.5
19
−
15.5
14
−
19
−
S21
phase response
−45
−
−
+45
−62
CTB
composite triple beat
49 channels flat; Vo = 44 dBmV;
measured at 859.25 MHz
−64.5
Xmod
CSO
cross modulation
49 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
−
−
−64.5
−67.5
−61
−61
dB
dB
composite second order distortion 49 channels flat; Vo = 44 dBmV;
measured at 860.5 MHz
d2
Vo
F
second order distortion
output voltage
note 1
−
−77
60.5
4
−70
−
dB
dim = −60 dB; note 2
f = 50 MHz
f = 550 MHz
f = 600 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
note 3
59
−
dBmV
dB
noise figure
4.5
5
−
−
dB
−
−
5
dB
−
−
5
dB
−
−
5.5
6.5
235
dB
−
5
dB
Itot
total current consumption (DC)
−
220
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
2. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo −6 dB;
fr = 860.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 849.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 15
3