Philips Semiconductors
Product specification
860 MHz, 18.5 dB push-pull amplifier
BGY885A
Table 4 Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
power gain
CONDITIONS
MIN.
18
TYP. MAX. UNIT
Gp
f = 50 MHz
18.5
−
19
−
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
f = 550 MHz
18.5
0
SL
FL
slope cable equivalent
f = 40 to 550 MHz
−
1.5
±0.3
−
flatness of frequency response f = 40 to 550 MHz
−
−
S11
input return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 50 MHz
20
18.5
17
16
20
18.5
17
16
−45
−
31
30
27.5
25
29
27.5
24
21
−
−
−
−
S22
output return losses
−
−
−
−
S21
phase response
+45
−60
CTB
composite triple beat
77 channels flat; Vo = 44 dBmV;
measured at 547.25 MHz
−61
Xmod
CSO
cross modulation
77 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
−
−
−61
−69
−60
−60
dB
dB
composite second order
distortion
77 channels flat; Vo = 44 dBmV;
measured at 548.5 MHz
d2
Vo
F
second order distortion
output voltage
note 1
−
−
−72
−
dB
dim = −60 dB; note 2
see Table 1
62
−
−
dBmV
dB
noise figure
−
−
Itot
total current consumption (DC) note 3
−
225
240
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 493.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 548.5 MHz.
2. Measured according to DIN45004B:
fp = 540.25 MHz; Vp = Vo;
fq = 547.25 MHz; Vq = Vo −6 dB;
fr = 549.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 538.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 22
6