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BFC13 PDF预览

BFC13

更新时间: 2024-02-14 01:54:31
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SEME-LAB /
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4TH GENERATION MOSFET

BFC13 数据手册

 浏览型号BFC13的Datasheet PDF文件第2页 
BFC13  
SEME  
LAB  
4TH GENERATION MOSFET  
SOT–227 Package Outline.  
Dimensions in mm (inches)  
N–CHANNEL  
ENHANCEMENT MODE  
HIGH VOLTAGE  
1 1.8 (0 .4 6 3 )  
1 2.2 (0 .4 8 0 )  
31 .5 (1 .2 4 0)  
31 .7 (1 .2 4 8)  
7 .8 (0 .3 07 )  
8 .9 (0 .35 0 )  
9 .6 (0 .37 8 )  
4 .1 (0 .16 1)  
4 .3 (0 .16 9)  
W
=
8 .2 (0 .3 22 )  
Hex Nut M 4  
(4 places)  
4 .8 (0 .18 7)  
4 .9 (0 .19 3)  
(4 places)  
H =  
1
2
ISOLATED  
R
4.0 (0 .1 57 )  
4.2 (0 .1 65 )  
0 .7 5 (0.03 0)  
0 .8 5 (0.03 3)  
POWER MOSFETS  
4
3
VDSS  
500V  
48A  
3.3 (0.129)  
3.6 (0.143)  
5.1 (0.2 01 )  
5.9 (0.2 32 )  
ID(cont)  
4.0 (0.157)  
=
(2 Places)  
R
14.9 (0.587)  
15.1 (0.594)  
1 .9 5 (0 .07 7 )  
2.1 4 (0 .0 84 )  
RDS(on) 0.10  
3 0 .1 (1 .1 8 5 )  
3 0 .3 (1 .1 9 3 )  
38.0 (1.496)  
38.2 (1.504)  
* Source 2 may be omitted,  
shorted to Source 1 or used for  
Gate drive circuit.  
Terminal 1 Source 2*  
Terminal 3 Gate  
Terminal 2 Drain  
Terminal 4 Source 1  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
I
Drain – Source Voltage  
500  
48  
V
DSS  
Continuous Drain Current  
1
A
A
D
I
, I  
Pulsed Drain Current and Inductive Current Clamped  
Gate – Source Voltage  
192  
±30  
520  
4.16  
DM LM  
V
V
GS  
D
Total Power Dissipation @ T  
Linear Derating Factor  
= 25°C  
W
case  
P
W / °C  
T , T  
J
Operating and Storage Junction Temperature Range  
Lead Temperature : 0.063” from Case for 10 Sec.  
–55 to 150  
300  
STG  
°C  
T
L
STATIC ELECTRICAL RATINGS (T  
= 25°C unless otherwise stated)  
case  
Characteristic  
Test Conditions  
Min. Typ. Max. Unit  
BV  
I
Drain – Source Breakdown Voltage  
V
V
V
V
V
V
V
V
= 0V , I = 250µA  
500  
V
DSS  
GS  
DS  
GS  
GS  
DS  
DS  
GS  
DS  
D
> I  
x R  
Max  
D(ON)  
DS(ON)  
2
On State Drain Current  
48  
A
D(ON)  
= 10V  
2
R
Drain – Source On State Resistance  
Zero Gate Voltage Drain Current  
=10V , I = 0.5 I [Cont.]  
0.10  
250  
DS(ON)  
D
D
= V  
DSS  
I
µA  
DSS  
(V  
= 0V)  
= 0.8V  
, T = 125°C  
C
1000  
GS  
DSS  
I
Gate – Source Leakage Current  
Gate Threshold Voltage  
= ±30V , V = 0V  
DS  
±100 nA  
GSS  
V
= V  
, I = 2.5mA  
2
4
V
GS(TH)  
GS  
D
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.  
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%  
Prelim. 1/94  
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.  

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