Datasheet > BDS20

BDS20

更新时间： 2024-04-09 18:59:34

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TTELEC		/
页数	文件大小	规格书
2页	797K
描述
Silicon Epibase NPN Darlington Transistor

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数据手册

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BDS20 数据手册

SILICON EPIBASE NPN

DARLINGTON TRANSISTOR

BDS20

•

High DC Current Gain

Hermetic Metal TO-220 Package

Designed For General Purpose Amplifiers and

Low Speed Switching Applications

•

Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

Base Current

80V

CBO

CEO

EBO

80V

0.1A

T = 25°C

Total Power Dissipation at

35W

Derate Above 25°C

0.2W/°C

-65 to +200°C

Junction Temperature Range

Storage Temperature Range

stg

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ. Max. Units

Thermal Resistance, Junction To Case

°C/W

θJC

** This datasheet supersedes document 7603

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 8215

Issue 1

Page 1 of 2

Website: http://www.semelab-tt.com

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