Datasheet > BD99010EFV-M

BD99010EFV-M

更新时间： 2024-01-30 01:26:21

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
31页	1054K
描述
Simple Light Load Mode

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数据手册

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BD99010EFV-M 数据手册

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BD99010EFV-M, BD99011EFV-M

11. Testing on application boards

The IC needs to be discharged after each test process as, while using the application board for testing, connecting a

capacitor to a low-impedance pin may cause stress to the IC. As a protection from static electricity, ensure that the

assembly setup is grounded and take sufficient caution with transportation and storage. Also, make sure to turn off

the power supply when connecting and disconnecting the inspection equipment.

12. GND wiring pattern

When both a small-signal GND and a high current GND are present, single-point grounding (at the set standard point)

is recommended. This in order to separate the small-signal and high current patterns and to ensure that voltage

changes stemming from the wiring resistance and high current do not cause any voltage change in the small-signal

GND. Similarly, care must be taken to avoid wiring pattern fluctuations in any connected external component GND.

13. This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a

parasitic diode or transistor. Relations between each potential may form as shown in the example below, where a

resistor and transistor are connected to a pin:

With the resistor, when GND＞ Pin A, and with the transistor (NPN), when GND＞Pin B:

The P-N junction operates as a parasitic diode.

With the transistor (NPN), when GND＞ Pin B:

The P-N junction operates as a parasitic transistor by interacting with the N layers of elements in proximity

to the parasitic diode described above.

Parasitic diodes inevitably occur in the structure of the IC. Their operation can result in mutual interference between

circuits and can cause malfunctions and, in turn, physical damage to or destruction of the chip. Therefore do not

employ any method in which parasitic diodes can operate such as applying a voltage to an input pin that is lower than

the (P substrate) GND.

Figure 48.

14.

REG PIN

REG is output that supplies the internal circuit. We do not recommend using REG for any other purpose.

www.rohm.com

TSZ22111・15・001

TSZ02201-0W1W0AL00030-1-2

07.Jul.2014 Rev.003

26/28

1...23 24 252627 28 29...31

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与BD99010EFV-M相关器件

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BD99010EFV-ME2	ROHM	获取价格	DC-DC Regulated Power Supply Module,
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BD99011EFV-ME2	ROHM	获取价格	DC-DC Regulated Power Supply Module,
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BD99954MWV	ROHM	获取价格	BD99954MWV is a Battery Management LSI for 1-4 cell Lithium-Ion secondary battery, and ava
BD9995NUV	ROHM	获取价格	Silicon monolithic integrated circuits
BD9995NUV_11	ROHM	获取价格	Silicon monolithic integrated circuits
BD9995NUV-TR	ROHM	获取价格	Regulator, CMOS, PDSO8,
BD9997FVT	ROHM	获取价格	Silicon monolithic integrated circuits

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