Datasheet > BCW60D/E9

BCW60D/E9

更新时间： 2024-01-31 15:29:28

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	32K
描述
TRANSISTOR \| BJT \| NPN \| 32V V(BR)CEO \| 100MA I(C) \| SOT-23

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技术参数
数据手册

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BCW60D/E9 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.82	最大集电极电流 (IC)：	0.1 A
配置：	Single	最小直流电流增益 (hFE)：	100
JESD-609代码：	e3	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.25 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

BCW60D/E9 数据手册

BCW60 Series

New Product

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistors (NPN)

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

Mounting Pad Layout

Top View

0.031 (0.8)

Pin Configuration

1. Base 2. Emitter

0.035 (0.9)

3. Collector

0.079 (2.0)

.037(0.95)

0.037 (0.95)

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Mechanical Data

Dimensions in inches and (millimeters)

Case: SOT-23 Plastic Package

Weight: approx. 0.008g

Features

Marking

Code:

BCW60A = AA

BCW60B = AB

BCW60C = AC

BCW60D = AD

• NPN Silicon Epitaxial Planar Transistors

• Suited for low level, low noise, low

frequency applications in hybrid cicuits.

• Low Current, Low Voltage.

Packaging Codes/Options:

• As complementary types, BCW61 Series PNP

transistors are recommended.

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

V_CES

V_CEO

V_EBO

I_C

Value

Unit

Collector-Emitter Voltage (V_BE=0)

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Collector Current (DC)

100

°C

Peak Collector Current

I_CM

200

Base Current (DC)

I_B

Power Dissipation

P_tot

250

Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance Junction to Ambient Air

T_j

150

T_S

–65 to +150

500⁽¹⁾

°C

R_ΘJA

°C/W

Note:

(1) Mounted on FR-4 printed-ciruit board.

Document Number 88170

09-May-02

www.vishay.com

12 3

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