MITSUBISHI SEMICONDUCTOR TRIAC
BCR5KM
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR5KM
OUTLINE DRAWING
Dimensions in mm
10 ± 0.3
2.8 ± 0.2
φ
3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
2.54 ± 0.25
➁ Measurement point of
case temperature
➁ ➁➁
➁
➁➁IT (RMS) .................................................................. 5A
➁➁VDRM ................................................................. 600V
T
1
TERMINAL
TERMINAL
➁
T
➁
2
➁
➁3
➁
GATE TERMINAL
➁➁IFGT !, IRGT ! , IRGT # ................... 15mA (10mA)
➁
➁➁UL Recognized: Yellow Card No.E80276(N)
File No. E80271
TO-220FN
APPLICATION
Control of heater such as electric rice cooker, electric pot
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
12
➁1
VDRM
VDSM
Repetitive peak off-state voltage
600
720
V
V
➁1
Non-repetitive peak off-state voltage
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
Conditions
Ratings
Unit
A
Commercial frequency, sine full wave 360° conduction, Tc=103°C
5
60Hz sinewave 1 full cycle, peak value, non-repetitive
50
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
I2t
I2t for fusing
10.4
A2s
PGM
PG (AV)
VGM
IGM
Tj
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
3
W
W
V
0.3
10
Peak gate current
2
A
Junction temperature
Storage temperature
Weight
–40 ~ +125
–40 ~ +125
2.0
°C
°C
g
Tstg
—
Ta=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
2000
V
Viso
Isolation voltage
➁1. Gate open.
Mar. 2002