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BCR16CM-12LCA8#BB0 PDF预览

BCR16CM-12LCA8#BB0

更新时间: 2024-02-16 09:52:03
品牌 Logo 应用领域
瑞萨 - RENESAS 三端双向交流开关栅极
页数 文件大小 规格书
8页 141K
描述
TRIAC

BCR16CM-12LCA8#BB0 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.75Is Samacsys:N
换向电压的临界上升率-最小值:10 V/us最大直流栅极触发电流:50 mA
最大直流栅极触发电压:1.5 V最大漏电流:2 mA
最高工作温度:150 °C最低工作温度:-40 °C
最大均方根通态电流:16 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
触发设备类型:TRIACBase Number Matches:1

BCR16CM-12LCA8#BB0 数据手册

 浏览型号BCR16CM-12LCA8#BB0的Datasheet PDF文件第1页浏览型号BCR16CM-12LCA8#BB0的Datasheet PDF文件第3页浏览型号BCR16CM-12LCA8#BB0的Datasheet PDF文件第4页浏览型号BCR16CM-12LCA8#BB0的Datasheet PDF文件第5页浏览型号BCR16CM-12LCA8#BB0的Datasheet PDF文件第6页浏览型号BCR16CM-12LCA8#BB0的Datasheet PDF文件第7页 
BCR16CM-12LC  
Preliminary  
Electrical Characteristics  
Rated value  
Parameter  
Symbol  
Unit  
Test conditions  
Min.  
Typ.  
Max.  
2.0  
Repetitive peak off-state current  
On-state voltage  
IDRM  
VTM  
mA  
V
Tj = 125C, VDRM applied  
1.75  
Tc = 25C, ITM = 25A,  
instantaneous measurement  
Gate trigger voltageNote2  
  
  
VFGT  
1.5  
1.5  
1.5  
50  
V
V
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
VRGT  
VRGT  
V
  
Gate trigger curentNote2  
IFGT  
mA  
mA  
mA  
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
  
  
IRGT  
50  
IRGT  
50  
  
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.2  
1.8  
V
Tj = 125C, VD = 1/2 VDRM  
Junction to caseNote3, Note 4  
Tj = 125C  
Rth (j-c)  
(dv/dt)c  
C/W  
V/s  
Critical-rate of rise of off-state  
commutation voltageNote5  
10  
Notes: 1. Gate open.  
2. Measurement using the gate trigger characteristics measurement circuit.  
3. Case temperature I measured at the T2 tab 1.5mm away from the molded case.  
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W.  
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.  
Commutating voltage and current waveforms  
Test conditions  
(inductive load)  
1. Junction temperature  
Time  
(di/dt)c  
Time  
Supply Voltage  
Tj = 125C  
2. Rate of decay of on-state commutating current  
(di/dt)c = –8 A/ms  
Main Current  
Main Voltage  
Time  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
R07DS1031EJ0200 Rev.2.00  
Feb 25, 2013  
Page 2 of 7  

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