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BCR16CM-12LB PDF预览

BCR16CM-12LB

更新时间: 2024-02-06 08:02:42
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瑞萨 - RENESAS 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
8页 126K
描述
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)

BCR16CM-12LB 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.25外壳连接:MAIN TERMINAL 2
配置:SINGLE换向电压的临界上升率-最小值:10 V/us
最大直流栅极触发电流:50 mA最大直流栅极触发电压:1.5 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大漏电流:2 mA元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:16 A
断态重复峰值电压:600 V子类别:TRIACs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:TRIAC
Base Number Matches:1

BCR16CM-12LB 数据手册

 浏览型号BCR16CM-12LB的Datasheet PDF文件第1页浏览型号BCR16CM-12LB的Datasheet PDF文件第3页浏览型号BCR16CM-12LB的Datasheet PDF文件第4页浏览型号BCR16CM-12LB的Datasheet PDF文件第5页浏览型号BCR16CM-12LB的Datasheet PDF文件第6页浏览型号BCR16CM-12LB的Datasheet PDF文件第7页 
BCR16CM-12LB (The product guaranteed maximum junction temperature of 150°C)  
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
IT (RMS)  
16  
A
Commercial frequency, sine full wave  
360° conduction, Tc = 125°CNote3  
Surge on-state current  
I2t for fusing  
ITSM  
I2t  
170  
121  
A
60Hz sinewave 1 full cycle, peak value,  
non-repetitive  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
5.0  
W
W
V
0.5  
10  
2
Peak gate current  
A
Junction temperature  
Storage temperature  
Mass  
Tj  
– 40 to +150  
– 40 to +150  
2.0  
°C  
°C  
g
Tstg  
Typical value  
Notes: 1. Gate open.  
Electrical Characteristics  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
IDRM  
Min.  
Typ.  
Max.  
2.0  
Unit  
mA  
V
Test conditions  
Tj = 150°C, VDRM applied  
VTM  
1.5  
Tc = 25°C, ITM = 25 A,  
Instantaneous measurement  
Gate trigger voltageNote2  
Ι
ΙΙ  
ΙΙΙ  
Ι
VFGT  
1.5  
1.5  
V
V
Tj = 25°C, VD = 6 V, RL = 6 ,  
RG = 330 Ω  
Ι
VRGT  
Ι
VRGT  
1.5  
V
ΙΙΙ  
Gate trigger currentNote2  
IFGT  
30Note6  
30Note6  
30Note6  
mA  
mA  
mA  
Tj = 25°C, VD = 6 V, RL = 6 ,  
RG = 330 Ω  
Ι
ΙΙ  
ΙΙΙ  
IRGT  
Ι
IRGT  
ΙΙΙ  
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.2/0.1  
1.4  
V
Tj = 125°C/150°C, VD = 1/2 VDRM  
Junction to caseNote3 Note4  
Tj = 125°C/150°C  
Rth (j-c)  
(dv/dt)c  
°C/W  
V/µs  
Critical-rate of rise of off-state  
commutating voltageNote5  
10/1  
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.  
3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.  
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.  
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
6. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)  
Commutating voltage and current waveforms  
Test conditions  
(inductive load)  
1. Junction temperature  
Time  
Supply Voltage  
Tj = 125°C/150°C  
(di/dt)c  
2. Rate of decay of on-state commutating current  
(di/dt)c = – 8.0 A/ms  
Time  
Time  
Main Current  
Main Voltage  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
REJ03G0457-0300 Rev.3.00 Nov 30, 2007  
Page 2 of 7  

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