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BC559CRLRA PDF预览

BC559CRLRA

更新时间: 2022-12-01 19:42:08
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 134K
描述
100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN

BC559CRLRA 数据手册

 浏览型号BC559CRLRA的Datasheet PDF文件第1页浏览型号BC559CRLRA的Datasheet PDF文件第3页 
BC559B, C BC560C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = –10 µAdc, V = –5.0 Vdc)  
BC559B  
BC559C/560C  
BC559B  
100  
100  
180  
380  
150  
270  
290  
500  
460  
800  
C
CE  
(I = –2.0 mAdc, V = –5.0 Vdc)  
C
CE  
BC559C/560C  
Collector–Emitter Saturation Voltage  
(I = –10 mAdc, I = –0.5 mAdc)  
V
V
Vdc  
CE(sat)  
–0.075  
–0.3  
–0.25  
–0.25  
–0.6  
C
B
(I = –10 mAdc, I = see note 1)  
C
B
(I = –100 mAdc, I = –5.0 mAdc, see note 2)  
C
B
Base–Emitter Saturation Voltage  
(I = –100 mAdc, I = –5.0 mAdc)  
–1.1  
Vdc  
Vdc  
BE(sat)  
C
B
Base–Emitter On Voltage  
(I = –10 µAdc, V = –5.0 Vdc)  
V
BE(on)  
–0.55  
–0.52  
–0.55  
–0.62  
–0.7  
C
CE  
(I = –100 µAdc, V = –5.0 Vdc)  
C
CE  
(I = –2.0 mAdc, V = –5.0 Vdc)  
C
CE  
SMALL–SIGNAL CHARACTERISTICS  
Current–Gain — Bandwidth Product  
f
250  
2.5  
MHz  
pF  
T
(I = –10 mAdc, V = –5.0 Vdc, f = 100 MHz)  
C
CE  
Collector–Base Capacitance  
(V = –10 Vdc, I = 0, f = 1.0 MHz)  
C
cbo  
CB  
E
Small–Signal Current Gain  
h
fe  
(I = –2.0 mAdc, V = –5.0 V, f = 1.0 kHz)  
BC559B  
BC559C/BC560C  
240  
450  
330  
600  
500  
900  
C
CE  
Noise Figure  
dB  
(I = –200 µAdc, V = –5.0 Vdc, R = 2.0 k, f = 1.0 kHz)  
NF  
NF  
0.5  
2.0  
10  
C
CE  
S
1
2
(I = –200 µAdc, V = –5.0 Vdc, R = 100 k, f = 1.0 kHz, f = 200 kHz)  
C
CE  
S
NOTES:  
1. I is value for which I = –11 mA at V = –1.0 V.  
B
C
CE  
2. Pulse test = 300 µs – Duty cycle = 2%.  
http://onsemi.com  
256  

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