Order this document
by BC237/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
3
BC BC BC
237 238 239
Rating
Symbol
Unit
Vdc
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
V
CEO
45
50
25
30
25
30
V
Vdc
CES
EBO
V
6.0
5.0
100
5.0
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
357
125
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 2.0 mA, I = 0)
BC237
BC238
BC239
V
45
25
25
—
—
—
—
—
—
V
V
(BR)CEO
C
B
Emitter–Base Breakdown Voltage
(I = 100 A, I = 0)
BC237
BC238
BC239
V
6.0
5.0
5.0
—
—
—
—
—
—
(BR)EBO
E
C
Collector Cutoff Current
I
CES
(V
CE
= 30 V, V
= 0)
BC238
BC239
—
—
0.2
0.2
15
15
nA
BE
(V
(V
= 50 V, V
= 30 V, V
= 0)
BC237
—
0.2
15
CE
BE
= 0) T = 125°C
BC238
BC239
—
—
0.2
0.2
4.0
4.0
µA
CE
BE
A
(V
CE
= 50 V, V
= 0) T = 125°C
BC237
—
0.2
4.0
BE
A
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1