Datasheet > BC182BRLRA

BC182BRLRA

更新时间： 2024-02-21 18:18:24

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安森美 - ONSEMI		/
页数	文件大小	规格书
3页	133K
描述
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

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BC182BRLRA 数据手册

ON Semiconductort

BC182

BC182A

BC182B

Amplifier Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

BC182

Unit

Vdc

CEO

CBO

EBO

Vdc

6.0

Vdc

Collector Current — Continuous

100

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watts

mW/°C

CASE 29–11, STYLE 17

TO–92 (TO–226AA)

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

COLLECTOR

Symbol

Max

357

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

BASE

EMITTER

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = 2.0 mA, I = 0)

(BR)CEO

(BR)CBO

(BR)EBO

—

Collector–Base Breakdown Voltage

(I = 10 mA, I = 0)

—

Emitter–Base Breakdown Voltage

(I = 100 mA, I = 0)

6.0

Collector Cutoff Current

(V = 50 V, V = 0)

CBO

—

0.2

—

Emitter–Base Leakage Current

(V = 4.0 V, I = 0)

EBO

Semiconductor Components Industries, LLC, 2001

190

Publication Order Number:

May, 2001 – Rev. 2

BC182/D

12 3

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