Datasheet > BAW56W_08

BAW56W_08

更新时间： 2024-11-19 08:49:03

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
3页	118K
描述
DUAL SURFACE MOUNT SWITCHING DIODE

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中文翻译

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BAW56W_08 数据手册

BAW56W

DUAL SURFACE MOUNT SWITCHING DIODE

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Features

Mechanical Data

•

Fast Switching Speed

•

Case: SOT-323

Case Material: Molded Plastic, "Green" Molding Compound,

Note 5. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Solderable per MIL-STD-202, Method 208

Ultra-Small Surface Mount Package

For General Purpose Switching Applications

High Conductance

Lead Free/RoHS Compliant (Note 3)

"Green" Device (Notes 4 and 5)

•

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe)

•

Polarity: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.006 grams (approximate)

SOT-323

TOP VIEW

Internal Schematic

TOP VIEW

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

100

V_RM

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

300

150

I_O

2.0

1.0

Non-Repetitive Peak Forward Surge Current

(Note 1)

@ t = 1.0μs

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Symbol

P_D

Value

200

Unit

Power Dissipation (Note 1)

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

625

°C/W

°C

R_θ

T_J, T_STG

-65 to +150

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 2)

Symbol

V_(BR)R

Min

Max

⎯

Unit

Test Condition

I_R= 2.5μA

I_F= 1.0mA

I_F= 10mA

I_F= 50mA

I_F= 150mA

0.715

0.855

1.0

Forward Voltage

V_F

⎯

1.25

V_R= 75V

μA

2.5

V_R= 75V, T_J= 150°C

V_R= 25V, T_J= 150°C

V_R= 20V

Reverse Current (Note 2)

I_R

Total Capacitance

2.0

4.0

C_T

t_rr

⎯

V_R= 0, f = 1.0MHz

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

Notes:

1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at

http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

1 of 3

www.diodes.com

April 2008

BAW56W

Document number: DS30064 Rev. 11 - 2

12 3

中文翻译

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