Memory ICs
BA6129AF / BA6162 / BA6162F
BA6162 / F (unless otherwise noted, Ta = 25°C, VRRES = VCC = 5V, RRES = 10kΩ)
Parameter
Symbol
ICC
Min.
—
Typ.
—
Max.
2.0
0.05
—
Unit
mA
V
Conditions
VCC = 5V, VBAT = 3V
No-load current dissipation
I / O voltage differential 1
Vo output voltage 1
—
VSAT1
VO1
0.03
4.97
4.90
4.86
4.20
100
—
VCC = 5V, VBAT = 3V, IO = – 1mA
VCC = 5V, VBAT = 3V, IO = – 1mA
VCC = 5V, VBAT = 3V, IO = – 15mA
VCC = 5V, VBAT = 3V, IO = – 30mA
VCC = H→L
4.95
4.70
4.50
4.00
—
V
—
Vo output voltage 2
VO2
V
—
Vo output voltage 3
VO3
V
Detection voltage
VS
4.40
—
V
VSH
mV
V
VCC = L→H
Detection hysteresis voltage
Reset output low level voltage
Reset leakage current
—
VRESL
IRESH
VOPL
VCSL
VCSH
VCSBL
VCSBH
KVS
0.4
0.1
1.2
0.1
—
VCC = 3.7V
—
—
µA
V
VCC = 5V, VRRES = 7V
—
0.8
—
VCC = H→L, VRES Ϲ 0.4V
VCC = 3.7V, VBAT = 3V, ICS = + 1µA
VCC = 5V, VBAT = 3V, ICS = – 1µA
VCC = 5V, VBAT = 3V, ICSB = + 1µA
VCC = 3.7V, VBAT = 3V, ICSB = – 1µA
Reset operating limit voltage
CS output low level voltage
CS output high level voltage
CSB output low level voltage
CSB output high level voltage
Detection voltage temperature characteristic
Switching voltage
—
V
—
4.9
V
—
—
0.1
—
V
Vo – 0.1
– 0.05
3.15
—
—
V
—
%
/
°C
—
+ 0.05
3.45
—
VCC = H→L, VBAT = 3V, RO = 200kΩ
VCC = L→H, VBAT = 3V, RO = 200kΩ
—
V
VB
3.30
100
—
mV
VBH
Switching hysteresis voltage
Switching voltage temperature characteristic
Backup current dissipation
I / O voltage differential 2
Vo output voltage 4
– 0.05
—
%
/
°C
KVB
+ 0.05
0.5
0.03
—
VCC = GND, VBAT = 3V
—
µA
V
ICCB
VSAT2
VO4
—
VCC = GND, VBAT = 3V, IO = – 1µA
VCC = GND, VBAT = 3V, IO = – 1µA
VCC = GND, VBAT = 3V, IO = – 100µA
IO = – 40mA
0.20
2.80
2.67
—
2.70
2.60
V
—
V
VO5
Vo output voltage 5
VCC – 0.5
—
—
V
VO6
Vo output voltage 6
VCC = 5V, VBAT = GND
—
µA
IOR
Reverse current
0.1
(Note) IO, ICS, and ICSB are + when flowing toward the pin and – when flowing away from the pin.
᭺ Not designed for radiation resistance.
4