Datasheet > B5200C

B5200C

更新时间： 2023-12-06 20:09:10

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	130K
描述
Rectifier device Schottky Diode

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B5200C 数据手册

B5150C - B5200C

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 150 - 200V

CURRENT: 5.0 A

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Classification Rating 94V-O

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SMC/DO-214AB

Dim

Min

5.59

6.60

2.75

0.15

7.75

0.10

0.76

2.00

Max

6.22

7.11

3.18

0.31

8.13

0.20

1.52

2.62

Mechanical Data

Case: SMC/DO-214AB, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.21 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol

B5150C

B5200C

Unit

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

150

105

150

200

150

200

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

at TL(see fig.1)

I(AV)

5.0

Amps

Peak forward surge current

IFSM

150.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.85

0.95

Maximum instantaneous forward voltage at 5.0A

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.2

TA=100 C

2.0

200

Typical junction capacitance (NOTE 1)

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

Storage temperature range

RθJA

50.0

-50 to +150

TJ,

TSTG

-50 to +150

Note:

1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2

”(5.0x5.0mm) copper pad areas

1 of 2

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