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B500C1000 PDF预览

B500C1000

更新时间: 2024-02-18 04:04:21
品牌 Logo 应用领域
WTE 二极管
页数 文件大小 规格书
3页 47K
描述
1.0A BRIDGE RECTIFIER

B500C1000 数据手册

 浏览型号B500C1000的Datasheet PDF文件第2页浏览型号B500C1000的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
B40C1000 – B500C1000  
1.0A BRIDGE RECTIFIER  
Features  
!
Diffused Junction  
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
A
B
+
~
~
-
WOB  
Min  
Dim  
A
Max  
9.10  
5.50  
8.60  
5.0  
B
C
D
C
27.9  
25.4  
0.71  
4.60  
Mechanical Data  
!
!
D
Case: Molded Plastic  
E
~
E
0.81  
5.60  
G
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 1.1 grams (approx.)  
Mounting Position: Any  
All Dimensions in mm  
!
!
!
!
-
+
Marking: Type Number  
G
G
~
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
B40C  
1000  
B80C B125C B250C B380C B500C  
Characteristic  
Symbol  
Unit  
1000  
1000  
1000  
1000  
1000  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
100  
40  
200  
300  
600  
900  
1200  
V
Input Voltage Recommended  
VR(RMS)  
IO  
80  
125  
250  
380  
500  
V
A
Average Rectified Output Current (Note 1) @TA = 50°C  
1.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
45  
A
Forward Voltage (per element)  
@IF = 1.0A  
VFM  
IRM  
1.0  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
500  
µA  
Operating Temperature Range  
Storage Temperature Range  
Tj  
-55 to +125  
-55 to +150  
°C  
°C  
TSTG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
B40C1000 – B500C1000  
1 of 3  
© 2002 Won-Top Electronics  

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