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B250C2300-1500A/B PDF预览

B250C2300-1500A/B

更新时间: 2024-01-25 21:20:14
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德欧泰克 - DIOTEC /
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2页 114K
描述
Silicon-Bridge-Rectifiers

B250C2300-1500A/B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSIP-T4针数:4
Reach Compliance Code:not_compliantHTS代码:8541.10.00.80
风险等级:5.84其他特性:UL RECOGNIZED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSIP-T4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:55 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:1.8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:600 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED

B250C2300-1500A/B 数据手册

 浏览型号B250C2300-1500A/B的Datasheet PDF文件第2页 
B...C2300-1500A/B  
B...C2300-1500A/B  
Silicon-Bridge-Rectifiers  
Silizium-Brückengleichrichter  
Version 2006-07-12  
Nominal current  
Nennstrom  
2.3 / 1.5 A  
40...500 V  
3.5  
19  
Alternating input voltage  
Eingangswechselspannung  
Type  
Typ  
Plastic case  
Kunststoffgehäuse  
19 x 3.5 x 10 [mm]  
1.3 g  
x
x
x
x
1.2  
= =  
Weight approx. – Gewicht ca.  
0.25  
0.8  
5
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
5
5
Standard packaging bulk  
Standard Lieferform lose im Karton  
Dimensions - Maße [mm]  
Suffix “A” for pinning / für Anschlussfolge [x x x x] = [+ ~ ~ –]  
Suffix “B” for pinning / für Anschlussfolge [x x x x] = [~ + ~ –]  
Recognized Product – Underwriters Laboratories Inc.® File E175067  
Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Max. alternating input voltage  
Max. Eingangswechselspannung  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
V
VRMS [V]  
V
RRM [V] 1)  
80  
B40C2300-1500A/B  
B80C2300-1500A/B  
B125C2300-1500A/B  
B250C2300-1500A/B  
B380C2300-1500A/B  
B500C2300-1500A/B  
40  
80  
160  
125  
250  
380  
500  
250  
600  
800  
1000  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFRM  
IFSM  
i2t  
10 A 2)  
50/55 A  
12.5 A2s  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+150°C  
1
2
Per diode – Pro Diode  
Valid, if leads are kept to ambient temperature TA = 50°C at a distance of 5 mm from case  
Gültig, wenn die Anschlussdrähte in 5 mm vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

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