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AZ23B10-V-G-18 PDF预览

AZ23B10-V-G-18

更新时间: 2024-02-10 00:04:58
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
8页 115K
描述
DIODE VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

AZ23B10-V-G-18 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.18
Is Samacsys:N配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:5.2 ΩJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.3 W参考标准:AEC-Q101
标称参考电压:10 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
最大电压容差:2%工作测试电流:5 mA
Base Number Matches:1

AZ23B10-V-G-18 数据手册

 浏览型号AZ23B10-V-G-18的Datasheet PDF文件第2页浏览型号AZ23B10-V-G-18的Datasheet PDF文件第3页浏览型号AZ23B10-V-G-18的Datasheet PDF文件第4页浏览型号AZ23B10-V-G-18的Datasheet PDF文件第6页浏览型号AZ23B10-V-G-18的Datasheet PDF文件第7页浏览型号AZ23B10-V-G-18的Datasheet PDF文件第8页 
AZ23-V-G-Series  
Vishay Semiconductors  
www.vishay.com  
V
V
0.8  
1.6  
25  
15  
ΔVZ = Rzth x IZ  
0.7  
VZ at IZ = 5 mA  
1.4  
1.2  
10  
0.6  
0.5  
0.4  
ΔVZ  
ΔVZ  
1
0.8  
0.6  
8
7
0.3  
0.2  
0.1  
6.2  
5.9  
0.4  
0.2  
5.6  
5.1  
0
- 1  
0
- 0.2  
- 0.4  
4.7  
3.6  
- 0.2  
1
2
3
4
5
10  
2
3
4
5
100 V  
100 120 140 C  
Tj  
0
20 40 60 80  
18127  
18124  
VZ at IZ = 5 mA  
Fig. 7 - Change of Zener Voltage vs. Junction Temperature  
Fig. 10 - Change of Zener Voltage from Turn-on up to the Point of  
Thermal Equilibrium vs. Zener Voltage  
mV/°C  
100  
V
5
Δ
VZ = Rzth x IZ  
IZ = 5 mA  
4
3
2
ΔVZ  
80  
60  
Δ
Tj  
ΔVZ  
IZ = 5 mA  
40  
20  
1
IZ = 2 mA  
0
0
0
20  
40  
60  
80  
100 V  
0
20  
40  
60  
80  
100 V  
VZ  
18128  
VZ  
18125  
Fig. 8 - Temperature Dependence of Zener Voltage vs.  
Fig. 11 - Change of Zener Voltage from Turn-on up to the Point of  
Zener Voltage  
Thermal Equilibrium vs. Zener Voltage  
mA  
50  
V
9
T = 25 °C  
j
3.9  
5.6  
2.7  
8
7
6.8  
3.3 4.7  
40  
8.2  
lZ  
51  
ΔV  
6
5
4
Z
30  
20  
43  
36  
3
2
Test  
current  
IZ 5 mA  
1
10  
0
0
I
= 2 mA  
Z
- 1  
0
20 40 60 80 100 120 140 °C  
0
1
2
3
4
5
6
7
8
9
10 V  
18126  
T
j
V
18111  
Z
Fig. 9 - Change of Zener Voltage vs. Junction Temperature  
Fig. 12 - Breakdown Characteristics  
Rev. 1.2, 31-Aug-11  
Document Number: 85867  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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