Datasheet > AY08A4-12

AY08A4-12

更新时间： 2024-02-11 03:54:08

品牌	Logo	应用领域
POWEREX		可控硅
页数	文件大小	规格书
2页	65K
描述
16-Pin Multiple Circuit Triac

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技术参数
数据手册

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AY08A4-12 技术参数

生命周期：	Obsolete	包装说明：	IN-LINE, R-PDIP-T16
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.84	配置：	SEPARATE, 4 ELEMENTS
JESD-30 代码：	R-PDIP-T16	元件数量：	4
端子数量：	16	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
认证状态：	Not Qualified	最大均方根通态电流：	0.8 A
断态重复峰值电压：	600 V	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	DUAL
触发设备类型：	TRIAC	Base Number Matches：	1

AY08A4-12 数据手册

Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272

AY08A3-**

AY08A4-**

16-Pin Multiple Circuit Triac

0.8 Amperes/400-700 Volts

Absolute Maximum Ratings (for One Chip), T = 25°C unless otherwise specified

Characteristics

Symbol

AY08A*-08

AY08A*-12

AY08A*-14

Units

Repetitive Peak Off-state Voltage, Gate Open

400

600

700

Volts

DRM

Non-Repetitive Peak Off-state Voltage, Gate Open

500

720

840

DSM

On-state Current, T = 86°C

0.8

Amperes

T(RMS)

Non-repetitive Peak Surge, One Cycle (60Hz)

TSM

I t for Fusing, t = 8.3 msec

I t

0.26

A sec

Peak Gate Power Dissipation, 20 msec

Average Gate Power Dissipation

Peak Gate Current

0.1

Watts

Amperes

Volts

G(avg)

0.8

Peak Gate Voltage

Storage Temperature

-40 to 125

°C

stg

Operating Temperature

°C

Electrical and Thermal Characteristics (for One Chip), T = 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

1.0

2.0

Units

Repetitive Off-state Current, Peak

Peak On-state Voltage

applied, T = 125°C

–

DRM

T = 25°C, I

= 1.2A

Volts

Thermal Resistance

Junction to Ambient

–

120

°C/Watt

th(j-a)

Gate — Parameters

Gate Current to Trigger II

Gate Current to Trigger III

Gate Voltage to Trigger II

Gate Voltage to Trigger III

Non-triggering Gate Voltage

Critical Rate-of-Rise of Commutating

Off-state Voltage

T = 25°C, V = 6V

–

5.0

2.0

–

RGT

III

R = 6⍀, R = 330⍀

–

RGT

T = 25°C, V = 6V

–

Volts

V/µs

RGT

III

R = 6⍀, R = 330⍀

–

RGT

T = 125°C, V = 1/2 V

DRM

0.1

0.5

(dv/dt)

T = 125°C

(dv/dt) = -0.4A/ms, V = 400V

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