AVT-55689

更新时间： 2024-02-25 03:48:11

品牌	Logo	应用领域
安华高科 - AVAGO		/
页数	文件大小	规格书
11页	500K
描述
50 â 6000 MHz InGaP HBT Gain Block

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技术参数
数据手册

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AVT-55689 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	TO-243	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.33.00.01
风险等级：	5.79	Is Samacsys：	N
Base Number Matches：	1

AVT-55689 数据手册

(1)

Absolute Maximum Rating T = 25° C

Thermal Resistance

(3)

Symbol

V_{d, MAX}

P_{IN, MAX}

P_DISS

Parameter

Units

Absolute Max.

5.5

Thermal Resistance

θ = 111° C/W

(I = 75 mA, T = 85° C)

Device Voltage

Notes:

CW RF Input Power

Total Power Dissipation ⁽²⁾

Operating Temperature

Junction Temperature

Storage Temperature

dBm

°C

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Ground lead temperature is 25° C. Derate 8.9

mW/° C for T >108° C.

3. Thermal resistance measured using Infrared

measurement technique.

550

T_OPT

-40 to 85

150

T_{J, MAX}

T_STG

°C

-65 to 150

(1)

Electrical Speciﬁcation

T = 25° C, Zo = 50 Ω, V = 5 V, P = -15 dBm (unless speciﬁed otherwise)

Symbol

I_d

Parameter and Test Condition

Device Current

Frequency

Units

Min.

Typ.

Max.

G_p

Power Gain

900 MHz

2000 MHz

18.8

17.2

15.5

18.5

f_3dB

OIP3 ⁽²⁾

3 dB Bandwidth

Output 3^rdIntercept Point

GHz

2.5

900 MHz

2000 MHz

dBm

32.5

S11

S22

Input Return Loss, 50 Ω source

Output Return Loss, 50 Ω load

Reverse Isolation

900 MHz

2000 MHz

-27

-19

900 MHz

2000 MHz

-14

-10.7

S12

900 MHz

2000 MHz

-22.6

-22.7

P1dB

Output Power at 1 dB Gain Compression

Noise Figure

900 MHz

2000 MHz

dBm

20.6

19.5

900 MHz

2000 MHz

4.1

4.3

Note :

1. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).

2. OIP3 test condition: F - F = 10 MHz with input power of -15 dBm per tone measured at worse side band.

RF1

RF2

123 4 5 6 7...11

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