AUIPS7141R
Truth Table
Op. Conditions
Normal mode
Normal mode
Open load
Input
H
L
H
L
H
L
H
L
Output
Ifb pin voltage
L
H
L
H
L
L
L
L
0V
I load x Rfb / Ratio
0V
0V
0V
Open load
Short circuit to GND
Short circuit to GND
Over temperature
Over temperature
V fault (latched)
0V
V fault (latched)
Operating voltage
Maximum Vcc voltage : this is the maximum voltage before the breakdown of the IC process.
Operating voltage : This is the Vcc range in which the functionality of the part is guaranteed. The AEC-Q100 qualification
is run at the maximum operating voltage specified in the datasheet.
Reverse battery
During the reverse battery the Mosfet is kept off and the load current is flowing into the body diode of the power Mosfet.
Power dissipation in the IPS : P = I load * Vf
If the power dissipation is too high in Rifb, a diode in serial can be added to block the current.
The transistor used to pull-down the input should be a bipolar in order to block the reverse current. The 100ohm input
resistor can not sustain continuously 16V (see Vcc-Vin max. in the Absolute Maximum Ratings section)
Active clamp
The purpose of the active clamp is to limit the voltage across the MOSFET to a value below the body diode break down
voltage to reduce the amount of stress on the device during switching.
The temperature increase during active clamp can be estimated as follows:
∆
= PCL ⋅ ZTH(tCLAMP
)
Tj
Where:
is the thermal impedance at tCLAMP and can be read from the thermal impedance curves given in the
)
ZTH(tCLAMP
data sheets.
: Power dissipation during active clamp
PCL = VCL ⋅ICLavg
: Typical VCLAMP value.
VCL = 65V
ICL
: Average current during active clamp
: Active clamp duration
ICLavg
=
2
ICL
tCL
=
di
dt
VBattery − VCL
di
dt
: Demagnetization current
=
L
Figure 9 gives the maximum inductance versus the load current in the worst case : the part switches off after an over
temperature detection. If the load inductance exceeds the curve, a free wheeling diode is required.
Over-current protection
The threshold of the over-current protection is set in order to guarantee that the device is able to turn on a load with an
inrush current lower than the minimum of Isd. Nevertheless for high current and high temperature the device may switch
off for a lower current due to the over-temperature protection. This behavior is shown in Figure 11.
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