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AU5790D8-T PDF预览

AU5790D8-T

更新时间: 2024-02-20 01:36:42
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
19页 104K
描述
IC DATACOM, INTERFACE CIRCUIT, PDSO8, PLASTIC, SOT-96, SO-8, Network Interface

AU5790D8-T 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.84JESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.9 mm
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified座面最大高度:1.75 mm
标称供电电压:12 V表面贴装:YES
电信集成电路类型:INTERFACE CIRCUIT温度等级:AUTOMOTIVE
端子面层:NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mmBase Number Matches:1

AU5790D8-T 数据手册

 浏览型号AU5790D8-T的Datasheet PDF文件第6页浏览型号AU5790D8-T的Datasheet PDF文件第7页浏览型号AU5790D8-T的Datasheet PDF文件第8页浏览型号AU5790D8-T的Datasheet PDF文件第10页浏览型号AU5790D8-T的Datasheet PDF文件第11页浏览型号AU5790D8-T的Datasheet PDF文件第12页 
Philips Semiconductors  
Preliminary specification  
Single wire CAN transceiver  
AU5790  
Dynamic (AC) CHARACTERISTICS for 33 kbps operation  
–40°C < T  
< +125°C; 5.5 V < V  
< 16 V; –0.3 V < V  
< 5.5 V; –0.3 V < V  
< 5.5 V; –0.3 V < V < 5.5 V; –0.3 V < V < 5.5 V;  
RxD  
amb  
BAT  
TxD  
NSTB  
EN  
–1 V < V  
< +16 V; bus load resistor at pin RTH: 2 k< R < 9.2 k; total bus load resistance 270 < R < 9.2 k;  
CANH  
T
L
C < 13.7 nF; 1µs < R  
C < 4µs; RxD pull-up resistor 2.2 k< R < 3.0 k; RxD: loaded with C < 30pF to GND;  
L d LR  
L
L
all voltages are referenced to pin 8 (GND); positive currents flow into the IC;  
typical values reflect the approximate average value at V = 13 V and T  
= 25°C, unless otherwise specified.  
amb  
BAT  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Pin CANH  
V
CANH harmonic content in  
normal mode  
NSTB = 5 V, EN = 5 V;  
dBAMN  
R = 270 , C = 15 nF;  
L
L
f
= 20 kHz, 50% duty cycle;  
70  
dBµV  
TxD  
8 V < V < 16 V;  
BAT  
0.53 MHz < f < 1.7 MHz, Note 2  
V
CANH harmonic content in  
wake-up mode  
NSTB = 5 V, EN = 0 V;  
dBAMW  
R = 270 , C = 15 nF;  
L
L
f
= 20 kHz, 50% duty cycle;  
80  
dBµV  
TxD  
8 V < V < 16 V;  
BAT  
0.53 MHz < f < 1.7 MHz, Note 2  
Pins NSTB, EN  
t
t
t
Normal mode to high-speed mode  
delay  
µs  
µs  
µs  
NH  
HN  
WN  
30  
30  
High-speed mode to normal mode  
delay  
Wake-up mode to normal mode  
delay  
30  
500  
50  
t
t
Normal mode to sleep mode delay  
Sleep mode to normal mode delay  
µs  
µs  
NS  
V
= 4 V; measured from  
SN  
CANH  
NSTB = 2.5 V to RxD = 2.5 V  
Pin TxD  
t
t
t
t
t
t
Transmit delay in normal mode,  
bus rising edge  
NSTB = 5 V, EN = 5 V;  
TrN  
R = 270 , C = 15 nF;  
L
L
5.5 V < V  
< 27 V;  
3
3
3
3
3
3
6.3  
8.25  
6.3  
µs  
µs  
µs  
µs  
µs  
µs  
BAT  
measured from the falling edge on  
TxD to V = 3.0 V  
CANH  
Transmit delay in normal mode,  
bus falling edge  
NSTB = 5 V, EN = 5 V;  
TfN  
R = 270 , C = 15 nF;  
L
L
5.5 V < V  
< 27 V;  
BAT  
measured from the rising edge on  
TxD to V = 1.0 V  
CANH  
Transmit delay in wake-up mode,  
bus rising edge to normal levels  
NSTB = 0 V, EN = 5 V;  
TrW  
R = 270 , C = 15 nF;  
L
L
5.5 V < V  
< 27 V;  
BAT  
measured from the falling edge on  
TxD to V = 3.0 V  
CANH  
Transmit delay in wake-up mode,  
bus rising edge to wake-up level  
NSTB = 0 V, EN = 5 V;  
TrW-S  
TfW-3.6  
TfW-4.0  
R = 270 , C = 15 nF;  
L
L
11.3 V < V  
< 27 V;  
18  
BAT  
measured from the falling edge on  
TxD to V = 8.9 V  
CANH  
Transmit delay in wake-up mode,  
bus falling edge with 3.6 µs time  
constant  
NSTB = 0 V, EN = 5 V;  
R = 270 , C = 13.3 nF;  
L
L
5.5 V < V  
< 27 V;  
12.7  
13.7  
BAT  
measured from the rising edge on  
TxD to V = 1 V, Note 2  
CANH  
Transmit delay in wake-up mode,  
bus falling edge with 4.0 µs time  
constant  
NSTB = 0 V, EN = 5 V;  
R = 270 , C = 15 nF;  
L
L
5.5 V < V  
< 27 V;  
BAT  
measured from the rising edge on  
TxD to V  
= 1 V  
9
CANH  
2000 Jun 09  

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