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AU5790D14/N,112 PDF预览

AU5790D14/N,112

更新时间: 2024-01-29 14:09:53
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
20页 120K
描述
IC DATACOM, INTERFACE CIRCUIT, PDSO14, PLASTIC, SO-14, Network Interface

AU5790D14/N,112 数据手册

 浏览型号AU5790D14/N,112的Datasheet PDF文件第5页浏览型号AU5790D14/N,112的Datasheet PDF文件第6页浏览型号AU5790D14/N,112的Datasheet PDF文件第7页浏览型号AU5790D14/N,112的Datasheet PDF文件第9页浏览型号AU5790D14/N,112的Datasheet PDF文件第10页浏览型号AU5790D14/N,112的Datasheet PDF文件第11页 
Philips Semiconductors  
Product data  
Single wire CAN transceiver  
AU5790  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Pin CANH (continued)  
–I  
CANHH  
Bus short circuit current in  
high-speed mode  
V
= –1 V,  
50  
190  
mA  
CANH  
TxD = 0 V; NSTB = 5 V; EN = 0 V;  
8 V < V  
< 16 V  
BAT  
I
Bus leakage current at loss of  
ground  
(I_CAN_LG = I_CANH + I_RTH)  
0 V < V  
< 16 V;  
–50  
50  
µA  
CANLG  
BAT  
see Figure 3 in the test circuits  
section  
T
T
Thermal shutdown  
Note 2  
Note 2  
155  
5
190  
15  
°C  
°C  
V
sd  
Thermal shutdown hysteresis  
Bus input threshold  
hys  
V
V
V
V
5.8 V < V  
all modes except sleep mode  
< 27 V,  
BAT  
1.8  
2.2  
T
Bus input threshold, low battery  
5.5 V < V < 5.8 V,  
1.5  
2.2  
8.1  
V
V
TL  
TS  
TSL  
BAT  
all modes except sleep mode  
Bus input threshold in sleep mode NSTB = 0 V, EN = 0 V,  
> 11.3 V  
6.15  
V
BAT  
Bus input threshold in sleep mode,  
low battery  
NSTB = 0 V, EN = 0 V,  
5.5 V < V  
V
– 4.3  
V
– 3.25  
V
BAT  
BAT  
< 11.3 V  
BAT  
Pin RTH  
V
RTH1  
V
RTH2  
Voltage on switched ground pin  
Voltage on switched ground pin  
I
I
= 1 mA  
= 6 mA  
0.1  
1
V
V
RTH  
RTH  
Pins NSTB, EN  
V
V
High level input voltage  
Low level input voltage  
Input current  
5.5 V < V  
5.5 V < V  
< 27 V  
< 27 V  
3
V
V
ih  
il  
BAT  
BAT  
1
I
i
V = 1 V and V = 5 V  
i
15  
50  
µA  
i
Pin TxD  
V
itxd  
TxD input threshold  
5.5 V < V  
< 27 V  
BAT  
1
3
V
–I  
TxD low level input current in  
normal mode  
NSTB = 5 V, EN = 5 V, V  
= 0 V  
= 5 V  
50  
180  
µA  
iltxd  
TxD  
TxD  
–I  
ihtxd  
TxD high level input current in  
sleep mode  
NSTB = 0 V, EN = 0 V, V  
–5  
10  
µA  
Pin RxD  
V
olrxd  
RxD low level output voltage  
I
= 2.2 mA;  
0.45  
V
RxD  
V
V
V
= 10 V, all modes  
CANH  
I
I
RxD low level output current  
RxD high level leakage  
= 5 V; V  
= 10 V  
3
35  
mA  
olrxd  
RxD  
RxD  
CANH  
CANH  
= 5 V; V  
= 0 V,  
–10  
+10  
µA  
ohrxd  
all modes  
NOTES:  
1. Operation at battery voltages down to 5.3 volts is guaranteed by design. Operation higher than 18 volts (18 V < V  
< 27 V) for up to two  
BAT  
minutes is permitted if the thermal design of the board prevents reaching the thermal protection temperature limit, T , otherwise the device  
sd  
will self protect. Typically these requirements will be encountered during jump start operation at T  
85 °C and V  
< 27 V. Refer to the  
amb  
BAT  
“Thermal Characteristics” section of this data sheet, or application note AN2005 for guidance.  
2. This parameter is characterized but not subject to production test.  
8
2001 May 18  

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