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ATC100B0R5BT500XT PDF预览

ATC100B0R5BT500XT

更新时间： 2024-02-29 04:05:58
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 电容器
页数 文件大小 规格书
17页 852K
描述
RF LDMOS Wideband Integrated Power Amplifier

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ATC100B0R5BT500XT 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：CHIP
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8532.24.00.20风险等级：5.56
其他特性：MIL-PRF-55681, MIL-PRF-123电容：5e-7 µF
电容器类型：CERAMIC CAPACITOR介电材料：CERAMIC
高度：2.59 mmJESD-609代码：e3
长度：2.79 mm安装特点：SURFACE MOUNT
多层：Yes负容差：20%
端子数量：2最高工作温度：175 °C
最低工作温度：-55 °C封装形式：SMT
包装方法：TR正容差：20%
额定（直流）电压（URdc）：500 V参考标准：MIL-PRF-55681
尺寸代码：1111表面贴装：YES
温度特性代码：P90温度系数：90+/-20ppm/Cel ppm/ °C
端子面层：Tin (Sn) - with Nickel (Ni) barrier端子形状：WRAPAROUND
宽度：2.79 mmBase Number Matches：1

ATC100B0R5BT500XT 数据手册

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Document Number: MW6IC1940N--1  
Rev. 3.1, 12/2009  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifier  
The MW6IC1940GNB wideband integrated circuit is designed with on--chip  
matching that makes it usable from 1920 to 2000 MHz. This multi--stage  
structure is rated for 26 to 32 Volt operation and covers all typical cellular base  
station modulation formats.  
MW6IC1940GNBR1  
Final Application  
1920--2000 MHz, 40 W, 28 V  
2 x W--CDMA  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIER  
•
Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 200 mA,  
I
DQ2 = 440 mA, Pout = 4.5 Watts Avg., f = 1922.5 MHz, Channel Bandwidth =  
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.  
Power Gain — 28.5 dB  
Power Added Efficiency — 13.5%  
IM3 @ 10 MHz Offset — --43 dBc in 3.84 MHz Bandwidth  
ACPR @ 5 MHz Offset — -- 46 dBc in 3.84 MHz Bandwidth  
Driver Applications  
•
Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 200 mA,  
IDQ2 = 350 mA, Pout = 26 dBm, Full Frequency Band (1920--2000 MHz),  
Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on  
CCDF.  
Power Gain — 27 dB  
IM3 @ 10 MHz Offset — --59 dBc in 3.84 MHz Bandwidth  
ACPR @ 5 MHz Offset — -- 62 dBc in 3.84 MHz Bandwidth  
•
•
Capable of Handling 3:1 VSWR, @ 28 Vdc, 1960 MHz, 40 Watts CW  
Output Power  
CASE 1329A--04  
TO--272 WB--16 GULL  
PLASTIC  
Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 20 W CW  
Pout  
.
Features  
•
Characterized with Series Equivalent Large--Signal Impedance Parameters  
and Common Source Scattering Parameters  
•
•
On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)  
Integrated Quiescent Current Temperature Compensation  
with Enable/Disable Function (1)  
•
•
•
•
•
Integrated ESD Protection  
225°C Capable Plastic Package  
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications  
RoHS Compliant  
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
GND  
DS1  
NC  
NC  
NC  
1
2
3
4
5
16  
15  
GND  
NC  
V
V
DS1  
RF  
/
out  
RF  
6
14  
in  
RF  
RF /V  
out DS2  
in  
V
DS2  
7
8
NC  
GS1  
GS2  
V
V
9
V
V
GS1  
GS2  
Quiescent Current  
Temperature Compensation  
10  
13  
12  
NC  
GND  
V
DS1  
(1)  
GND  
11  
V
DS1  
(Top View)  
Note: Exposed backside of the package is  
the source terminalfor the transistors.  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control  
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.  
© Freescale Semiconductor, Inc., 2006--2009. All rights reserved.  
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