Datasheet > AT50P06S

AT50P06S

更新时间： 2024-06-27 12:08:47

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AT50P06S 数据手册

AT50P06S

P-Channel Enhancement Mode Power MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

I_D

-60V

28mΩ@10V

-50A

Feature

Application

High density cell design for ultra low Rdson

Load switch

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Package

Circuit diagram

TO-220AB

Marking

T50P06

XXXXX

Document ID

AS-3150110

Issued Date

2003/03/08

Revised Date

2012/05/16

Revision

Page.

Page 1

12 3 4 5 6

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