Datasheet > 存储 > OTP ROM> AT27BV4096-15JI

AT27BV4096-15JI

更新时间： 2024-01-30 11:21:34

品牌	Logo	应用领域
爱特美尔 - ATMEL		电池可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
9页	227K
描述
4 Megabit 256K x 16 Unregulated Battery-Voltage High Speed OTP CMOS EPROM

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数据手册

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AT27BV4096-15JI 数据手册

AT27BV4096

Programming Waveforms⁽¹⁾

Notes: 1. The Input Timing Reference is 0.8V for V_ILand 2.0V

for V_IH.

3. When programming the AT27BV4096 a 0.1 µF capacitor is

required across V_PPand ground to suppress spurious volt-

age transients.

2. t_OEand t_DFPare characteristics of the device but

must be accommodated by the programmer.

DC Programming Characteristics

TA = 25 ± 5°C, V_CC= 6.5 ± 0.25V, V_PP= 13.0 ± 0.25V

Limits

Symbol

Parameter

Test Conditions

Units

µA

Min

Max

±10

Input Load Current

V_IN= V_IL, V_IH

Input Low Level

-0.6

2.0

0.8

Input High Level

V_CC+ 0.1

0.4

Output Low Voltage

I_OL= 2.1 mA

Output High Voltage

V_CCSupply Current (Program and Verify)

V_PPSupply Current

I_OH= -400 µA

2.4

CC2

PP2

CE = V_IL

A9 Product Identification Voltage

11.5

12.5

3-69

1...4 5 678 9

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