Datasheet > AT27BV020-90JJ

AT27BV020-90JJ

更新时间： 2022-12-01 20:28:23

品牌	Logo	应用领域
爱特美尔 - ATMEL		OTP只读存储器
页数	文件大小	规格书
15页	369K
描述
OTP ROM, 256KX8, 90ns, CMOS, PQCC32, PLASTIC, MS-016AE, LCC-32

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AT27BV020-90JJ 数据手册

AT27BV020

8. DC and Operating Characteristics for Read Operation

Symbol

Parameter

Condition

Min

Max

Units

V_CC= 2.7V to 3.6V

I_LI

Input Load Current

Output Leakage Current

V_IN= 0V to V_CC

µA

I_LO

V_OUT= 0V to V_CC

(2)

I_PP1

V_PP⁽¹⁾Read/Standby Current V_PP= V_CC

_SB1(CMOS), CE = V_CC0.3V

I_SB

I_CC

V_IL

V_CC⁽¹⁾Standby Current

V_CCActive Current

Input Low Voltage

I_SB2(TTL), CE = 2.0 to V_CC+ 0.5V

100

f = 5 MHz, I_OUT= 0 mA, CE = V_IL, V_CC= 3.6V

V_CC= 3.0 to 3.6V

-0.6

0.8

V_CC= 2.7 to 3.6V

V_CC= 3.0 to 3.6V

V_CC= 2.7 to 3.6V

I_OL= 2.0 mA

0.2 x V_CC

V_CC+ 0.5

0.4

2.0

V_IH

Input High Voltage

Output Low Voltage

0.7 x V_CC

V_OL

_OL= 100 µA

0.2

I_OL= 20 µA

0.1

I_OH= -2.0 mA

2.4

V_OH

Output High Voltage

_OH= -100 µA

V_CC- 0.2

V_CC- 0.1

I_OH= -20 µA

V_CC= 4.5V to 5.5V

I_LI

Input Load Current

V_IN= 0V to V_CC

µA

I_LO

Output Leakage Current

V_OUT= 0V to V_CC

(2)

I_PP1

V_PP⁽¹⁾Read/Standby Current V_PP= V_CC

I_SB1(CMOS), CE = V_CC0.3V

100

I_SB

V_CC⁽¹⁾Standby Current

I_SB2(TTL), CE = 2.0 to V_CC+ 0.5V

f = 5 MHz, I_OUT= 0 mA, CE = V_IL

I_CC

V_IL

V_IH

V_OL

V_CCActive Current

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

-0.6

2.0

0.8

V_CC+ 0.5

0.4

I_OL= 2.1 mA

I_OH= -400 µA

V_OH

2.4

Notes: 1. V_CCmust be applied simultaneously with or before V_PP, and removed simultaneously with or after V_PP.

2. V_PPmay be connected directly to V_CC, expect during programming. The supply current would then be the sum of I_CCand I_PP.

0902F–EPROM–12/07

1 2 3 456 7 8...15

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