Datasheet > AT-635TR

AT-635TR

更新时间： 2024-02-09 07:32:12

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
2页	70K
描述
Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz

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技术参数
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AT-635TR 技术参数

生命周期：	Obsolete	包装说明：	SOP14,.25
Reach Compliance Code：	compliant	风险等级：	5.67
标称衰减：	35 dB	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	21.14 dBm
最大插入损耗：	7.8 dB	安装特点：	SURFACE MOUNT
端子数量：	14	最大工作频率：	2000 MHz
最小工作频率：		最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SOP14,.25	电源：	-4 V
射频/微波设备类型：	VARIABLE ATTENUATOR	子类别：	RF/Microwave Attenuators
表面贴装：	YES	技术：	GAAS
最大电压驻波比：	2	Base Number Matches：	1

AT-635TR 数据手册

VoltageVariable Absorptive Attenuator, 35 dB

DC - 2 GHz

AT-635

V 3.00

SO-14

Features

● 35 dB Voltage Variable Attenuation @ 1 GHz

● Single Voltage Control 0 to -4 Volts

● Low DC Power Consumption: 10 mW

● Nanosecond Switching Speed

● Temperature Range: -40˚C to +85˚C

● Low Cost SOIC14 Plastic Package

● Tape and Reel Packaging Available

Description

M/A-COM’s AT-635 is a GaAs MMIC voltage variable absorptive

attenuator in a low cost SOIC 14-lead surface mount plastic pack-

age. The AT-635 is ideally suited for use where attenuation fine

tuning, fast switching and very low power consumption are

required. Typical applications include radio, cellular, GPS equip-

ment and other Automatic Gain/Level Control circuits.

Ordering Information

Part Number

The AT-635 is fabricated with a monolithic GaAs MMIC using a

mature 1-micron process. The process features full chip passiva-

tion for increased performance and reliability.

Package

AT-635 PIN

SOIC 14-Lead Plastic Package

Forward Tape & Reel

AT-635TR

Electrical Specifications, T_A= +25°C

Parameter

Insertion Loss

Test Conditions²

Unit

Min.

Typ.

6.5

6.7

7.2

7.5

Max

6.7

7.0

7.4

7.8

DC – 0.1 GHz

DC – 0.5 GHz

DC – 1.0 GHz

DC – 2.0 GHz

Flatness

(Peak to Peak)

DC-2 GHz

10 dB Attenuation

20 dB Attenuation

30 dB Attenuation

+/-1.0

+/-1.2

+/-1.3

+/-1.5

VSWR

2.0:1

Trise, Tfall

Ton, Toff

Transients

10% to 90% RF, 90% to 10% RF

50% Control to 90% RF, 50% Control to 10% RF

In Band

Power

Handling

Linear Operation

Absolute Max Input Power

dBm

Measured Relative

to Input Power

0.05 GHz

0.5 – 2.0 GHz

dBm

(for two-tone input power up to +5 dBm)

Measured Relative

to Input Power

0.05 GHz

0.5 – 2.0 GHz

dBm

18.5

31⁽³⁾

36⁽³⁾

(for two-tone input power up to +5 dBm)

1.Refer to “Tape and Reel Packaging”Section, or contact factory.

2.All measurements at 1 GHz in a 50Wsystem, unless otherwise specified.The A control voltage 0 to -4 volts @ 20 µA typ.

3. For levels above 6 dB attenuation. For levels below 6 dB, the minimum specification numbers apply.

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