Datasheet > ASSR-4111

ASSR-4111

更新时间： 2022-05-24 13:22:04

品牌	Logo	应用领域
安华高科 - AVAGO		继电器固态继电器
页数	文件大小	规格书
16页	558K
描述
General Purpose, Form A, Solid State Relay (Photo MOSFET)

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数据手册

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ASSR-4111 数据手册

Lead Free IR Proﬁle

TIME WITHIN 5°C of ACTUAL

PEAK TEMPERATURE

20-40 SEC.

260 +0/-5°C

T_p

217°C

T_L

RAMP-UP

3°C/SEC. MAX.

150 - 200°C

RAMP-DOWN

6°C/SEC. MAX.

T_smax

T_smin

t_s

t_L

60 to 150 SEC.

PREHEAT

60 to 180 SEC.

t 25°C to PEAK

TIME (SECONDS)

NOTES:

THE TIME FROM 25°C to PEAK TEMPERATURE = 8 MINUTES MAX.

T_smax= 200°C, T_smin= 150°C

Non-halide ﬂux should be used.

Regulatory Information

The ASSR-4110, ASSR-4111, ASSR-4120 and ASSR-4130 (Preliminary Product Release) are approved by the following

organizations:

Approvals under UL 1577, component recognition program up to V = 3750 V

ISO

RMS

Approvals under CSA Component Acceptance Notice #5.

Insulation and Safety Related Speciﬁcations

ASSR-

4110

ASSR-4111 ASSR-

Parameter

Symbol

ASSR-4120

4130 Units

Conditions

Minimum External Air

Gap (Clearance)

L(101)

4.9

7.1

4.9

4.8

Measured from input terminals to output

terminals, shortest distance through air.

Minimum External Track- L(102)

ing (Creepage)

4.9

7.4

Measured from input terminals to output

terminals, shortest distance path along

body.

Minimum Internal Plastic

Gap (Internal Clearance)

0.08

Through insulation distance conductor to

conductor, usually the straight line distance

thickness between the emitter and detec-

tor.

Tracking Resistance

(Comparative Tracking

Index)

CTI

175

IIIa

175

IIIa

175

IIIa

DIN IEC 112/VDE 0303 Part 1

Isolation Group

(DIN VDE0109)

Material Group (DIN VDE 0109)

1...4 5 678 9 10...16

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