ASGP0130SD thru ASGP0160SD
Surface Mount Schottky Rectifier
Reverse Voltage 30~60V Forward Current 1A
Features
• Low VF Schottky barrier diodes
• Very low profile - typical height of 1.0 mm
• Low forward voltage drop
• Low leakage current
eSGP(SOD-323F)
• Moisture sensitivity: level 1, per J-STD-020
• High temperature soldering guaranteed: 260℃/10 seconds
• AEC-Q101 qualified
Typical Applications
For use of fast swiching in RF module, lighting, cellular phone, portable device, power supplies
and automotive applications.
Maximum Ratings (TA = 25 °C unless otherwise noted)
ASGP0130SD ASGP0140SD ASGP0160SD Unit
Parameter
Symbol
Maximum repetitive peak reverse voltage
Maximum RMS voltage
30
21
30
40
28
40
1.0
60
42
60
V
V
V
A
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
25
A
IFSM
Peak Repetitive Reverse Surge Current at
tp=2us,1KHZ
0.5
A
IRRM
- 55 to + 125
Operating junction and storage temperature range
- 55 to + 150
°C
TJ, TSTG
Electrical Characteristics (TA = 25 °C unless otherwise noted)
Test
Conditions
Ta=25
IF=1A,Ta=25℃
ASGP0130SD ASGP0140SD ASGP0160SD Unit
Parameter
Symbol
Minimum Breakdown voltage
VBR
30
40
60
0.55
0.48
Volts
0.70
0.60
Maximum instantaneous
forward voltage
VF
IR
IF=1A,Ta=125℃
Ta=25℃
50
10
60
40
uA
mA
pF
Maximum DC reverse current at
rated DC blocking voltage
Ta=125℃
Typical junction capacitance
CJ
4.0 V, 1 MHz
juntion to
RθJL
Typical thermal resistance
℃/W
Note:1),The thermal resistance from junction to lead,mounted on P.C.B with 5×5mm copper pads,2 OZ,FR4 PCB
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2016.03-Rev.B