5秒后页面跳转
AS4C256M8D3 PDF预览

AS4C256M8D3

更新时间: 2022-02-26 11:00:24
品牌 Logo 应用领域
ALSC /
页数 文件大小 规格书
82页 2107K
描述
Fully synchronous operation

AS4C256M8D3 数据手册

 浏览型号AS4C256M8D3的Datasheet PDF文件第1页浏览型号AS4C256M8D3的Datasheet PDF文件第3页浏览型号AS4C256M8D3的Datasheet PDF文件第4页浏览型号AS4C256M8D3的Datasheet PDF文件第5页浏览型号AS4C256M8D3的Datasheet PDF文件第6页浏览型号AS4C256M8D3的Datasheet PDF文件第7页 
AS4C256M8D3  
2 Gb (256M x 8 bit) DDR3 Synchronous DRAM (SDRAM)  
Confidential  
Features  
Advanced (Rev. 3.0, Aug. /2014)  
Overview  
JEDEC Standard Compliant  
The 2Gb Double-Data-Rate-3 DRAMs is double data  
rate architecture to achieve high-speed operation. It is  
internally configured as an eight bank DRAM.  
The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 bank  
devices. These synchronous devices achieve high  
speed double-data-rate transfer rates of up to 1600  
Mb/sec/pin for general applications.  
The chip is designed to comply with all key DDR3  
DRAM key features and all of the control and address  
inputs are synchronized with a pair of externally  
supplied differential clocks. Inputs are latched at the  
cross point of differential clocks (CK rising and CK#  
falling). All I/Os are synchronized with differential DQS  
pair in a source synchronous fashion.  
Power supplies: VDD & VDDQ = +1.5V 0.075V  
Operating temperature:  
- Commercial(Extended) (0 ~ 95°C)  
- Industrial (-40 ~ 95°C)  
Supports JEDEC clock jitter specification  
Fully synchronous operation  
Fast clock rate: 667/800MHz  
Differential Clock, CK & CK#  
Bidirectional differential data strobe  
- DQS & DQS#  
8 internal banks for concurrent operation  
8n-bit prefetch architecture  
These devices operate with a single 1.5V ± 0.075V  
power supply and are available in BGA packages.  
Internal pipeline architecture  
Precharge & active power down  
Programmable Mode & Extended Mode registers  
Additive Latency (AL): 0, CL-1, CL-2  
Programmable Burst lengths: 4, 8  
Burst type: Sequential / Interleave  
Output Driver Impedance Control  
8192 refresh cycles / 64ms  
- Average refresh period  
7.8μs @ -40TC+85℃  
3.9μs @ +85TC+95℃  
Write Leveling  
OCD Calibration  
Dynamic ODT (Rtt_Nom & Rtt_WR)  
RoHS compliant  
Auto Refresh and Self Refresh  
78-ball 8 x 10.5 x 1.2mm FBGA package  
- All parts are ROHS Compliant  
Table 1. Speed Grade Information  
Speed Grade  
Clock Frequency CAS Latency  
tRCD  
tRP  
(ns)  
(ns)  
13.5  
13.75  
DDR3-1333  
DDR3-1600  
667 MHz  
800 MHz  
9
13.5  
11  
13.75  
Table 2. Ordering Information  
Product part No  
Org  
Temperature  
Package  
AS4C256M8D3-12BCN  
AS4C256M8D3-12BIN  
AS4C256M8D3-15BCN  
AS4C256M8D3-15BIN  
256 x 8 Commercial (Extended)  
0°C to 90°C  
256 x 8 Industrial  
-40°C to 95°C  
256 x 8 Commercial (Extended)  
0°C to 90°C  
256 x 8 Industrial  
-40°C to 95°C  
78-ball FBGA  
78-ball FBGA  
78-ball FBGA  
78-ball FBGA  
Confidential  
2
Rev. 3.0  
Aug. /2014  

与AS4C256M8D3相关器件

型号 品牌 描述 获取价格 数据表
AS4C256M8D3-12BCN ALSC Fully synchronous operation

获取价格

AS4C256M8D3-12BIN ALSC Fully synchronous operation

获取价格

AS4C256M8D3-15BCN ALSC Fully synchronous operation

获取价格

AS4C256M8D3-15BIN ALSC Fully synchronous operation

获取价格

AS4C256M8D3L-12BCN ALSC Bidirectional differential data strobe

获取价格

AS4C256M8D3L-12BIN ALSC Bidirectional differential data strobe

获取价格